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UNISONIC TECHNOLOGIES CO., LTD UTD410
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
1 SOT-223
Power MOSFET
The UTD410 can prov ide excellent R DS(ON) and low g ate charge b y us ing adva nced tr ench tech nology. T his UTD410 is suitable for using as a load switch or in PWM applications.
FEATURES
1 TO-252
* VDS=30V, ID=8A * RDS(ON) =48mΩ @VGS =10V
SYMBOL
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free UTD410L-TN3-R UT D410G-TN3-R UTD410L-TN3-T UT D410G-TN3-T UTD410L-AA3-R UT D410G-AA3-R Package TO-252 TO-252 SOT-223 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tube Tape Reel
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-142.B
http://www.Datasheet4U.com
UTD410
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 8 A Pulsed Drain Current (Note1) IDM 20 Repetitive Avalanche Energy (L=0.1mH Note1) EAR 10 mJ TO-252 2 Power Dissipation (TC=25°C) PD W SOT-223 2.3 Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL TO-252 SOT-223 θJA MIN 46 TYP MAX 60 55 UNIT °C/W °C/W
Junction-to-Ambient (TC=25°C)
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
TEST CONDITIONS BVDSS IDSS IGSS VGS(TH) RDS(ON) VGS =0 V, ID =250µA VDS =24V,VGS =0V VDS =0 V, VGS = ±20V VDS =VGS, ID =250µA VGS=10V, ID =8A VGS=4.5V, ID =2A MIN 30 TYP MAX UNIT V 1 ±100 1.8 48 75 3 65 105
PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Drain-Source On-State Resistance
µA nA V mΩ pF pF pF ns ns ns ns nC nC nC
1
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS =15 V, VGS =0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VGS=10V,VDD=15V, RL=1.8Ω, RG=3Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall-Time tF Total Gate Charge QG Gate-Source Charge QGS VGS=10V, VDS=15V, ID=8A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A Maximum Continuous Drain-Source IS Diode Forward Current Reverse Recovery Time tRR IF=8A, dIF/dt=100A/μs Reverse Recovery Charge QRR Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board
288 57 39 3.7 3.7 15.6 2.6 6.72 0.76 1.78 0.75 1 4.3 12.6 5.1
V A ns nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-142.B
UTD410
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current, ID (A)
On-Resistance, RDS(ON) (.