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UTD410 Dataheets PDF



Part Number UTD410
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description N-CHANNEL ENHANCEMENT MODE
Datasheet UTD410 DatasheetUTD410 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UTD410 N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 SOT-223 Power MOSFET The UTD410 can prov ide excellent R DS(ON) and low g ate charge b y us ing adva nced tr ench tech nology. T his UTD410 is suitable for using as a load switch or in PWM applications. „ FEATURES 1 TO-252 * VDS=30V, ID=8A * RDS(ON) =48mΩ @VGS =10V „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD410L-TN3-R UT D410G-TN3-R UTD410L-TN3-T UT D410G-TN3-T UTD410L-AA3-R .

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UNISONIC TECHNOLOGIES CO., LTD UTD410 N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 SOT-223 Power MOSFET The UTD410 can prov ide excellent R DS(ON) and low g ate charge b y us ing adva nced tr ench tech nology. T his UTD410 is suitable for using as a load switch or in PWM applications. „ FEATURES 1 TO-252 * VDS=30V, ID=8A * RDS(ON) =48mΩ @VGS =10V „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD410L-TN3-R UT D410G-TN3-R UTD410L-TN3-T UT D410G-TN3-T UTD410L-AA3-R UT D410G-AA3-R Package TO-252 TO-252 SOT-223 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-142.B http://www.Datasheet4U.com UTD410 „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 8 A Pulsed Drain Current (Note1) IDM 20 Repetitive Avalanche Energy (L=0.1mH Note1) EAR 10 mJ TO-252 2 Power Dissipation (TC=25°C) PD W SOT-223 2.3 Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL TO-252 SOT-223 θJA MIN 46 TYP MAX 60 55 UNIT °C/W °C/W Junction-to-Ambient (TC=25°C) „ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) TEST CONDITIONS BVDSS IDSS IGSS VGS(TH) RDS(ON) VGS =0 V, ID =250µA VDS =24V,VGS =0V VDS =0 V, VGS = ±20V VDS =VGS, ID =250µA VGS=10V, ID =8A VGS=4.5V, ID =2A MIN 30 TYP MAX UNIT V 1 ±100 1.8 48 75 3 65 105 PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Drain-Source On-State Resistance µA nA V mΩ pF pF pF ns ns ns ns nC nC nC 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS =15 V, VGS =0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VGS=10V,VDD=15V, RL=1.8Ω, RG=3Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall-Time tF Total Gate Charge QG Gate-Source Charge QGS VGS=10V, VDS=15V, ID=8A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A Maximum Continuous Drain-Source IS Diode Forward Current Reverse Recovery Time tRR IF=8A, dIF/dt=100A/μs Reverse Recovery Charge QRR Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board 288 57 39 3.7 3.7 15.6 2.6 6.72 0.76 1.78 0.75 1 4.3 12.6 5.1 V A ns nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-142.B UTD410 „ TYPICAL CHARACTERISTICS Power MOSFET Continuous Drain Current, ID (A) On-Resistance, RDS(ON) (.


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