UTT120N06

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET The U TC UTT 120N06 is a n N-chan nel enh ancement mod e Power FET using UT C’s advanced technology to provide customers with a mini mum on-state resistance and su perior s witching performance. It also can withstand h igh e nergy p ulse in the aval anche an d commutation mode. „ FEATURES * Fast switching speed * RDS(ON)＜7mΩ @ VGS=10V „ SYMBOL „ ORDERING INFORMATION 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Package Lead Free Halogen Free UTT120N06L-TA3-T UTT120N06G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source UTT120N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube (2) TA3: TO-220 (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-756.a http://www.Datasheet4U.com UTT120N06 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous I A D 120 Drain Current Pulsed I A DM 480 Avalanche Energy Single Pulsed EAS 875 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 83 W Junction Temperature TJ + 150 °C Storage Temperature TSTG -55~ +150 °C Note: Absolute ma ximum ratings are those va lues be yond which the device could be perm anently dam aged. Absolute maximum ratings are stress ratings on...