UTT200N02

UNISONIC TECHNOLOGIES CO., LTD UTT200N02 Preliminary 200 A, 20 V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT200N02 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. T he UTC UT T200N02 is genera lly applied in s ynchronous Rectification or DC to DC convertor. „ FEATURES * VDS = 20V * ID= 200A * RDS(ON)=2.0mΩ(Typ.) @ VGS=10V * Low Gate Charge (Typical 84nC) * High Switching Speed * High Power and Current Handling Capability * RoHS Compliant „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free UTT200N02L-TA3-T UT T200N02G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-576.a http://www.Datasheet4U.com UTT200N02 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous (Silicon Limited) ID 200 (Note 2) A Drain Current Pulsed (Note 3) IDM 800 A Single Pulsed Avalanche Energy (Note 4) EAS 864 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 6.0 V/ns Power Dissipation 214 W PD Derate above 25°C 1.43 W /°C Junction Temperature TJ + 150 °C Storage Temperature Range TSTG -55~ +175 °C Note: 1. Absolute maximum ratings are those values be...