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FGH40N120AN

Fairchild Semiconductor

1200V NPT IGBT

FGH40N120AN 1200V NPT IGBT FGH40N120AN 1200V NPT IGBT Features • High speed switching • Low saturation voltage : VCE(sa...


Fairchild Semiconductor

FGH40N120AN

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Description
FGH40N120AN 1200V NPT IGBT FGH40N120AN 1200V NPT IGBT Features High speed switching Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A High input impedance R oHS complaint IGBT Description July 2008 ® Employing NPT technolo gy, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as indu ction heating (IH), motor control, ge neral pur pose inverter s and un interruptible pow er supplies (UPS). Applications Induction Heating, U PS, AC & D C motor controls and general purpose inverters. E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM(1) PD SCWT TJ TSTG TL Notes: (1) Pulse width limited by max. junction temperature Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds @TC = 25°C @TC = 100°C @TC = 25°C6 @TC = 100°C4 FGH40N120AN 1200 ±25 4 0 160 417 167 10 -55 to +150 -55 to +150 300 Units V V A A A W W µs °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.3 40 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchild...




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