F6N60

! GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ‹ ‹ POWER MOSFET FEATURES ‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature IRF6N60 PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET Page 1 http://www.Datasheet4U.com POWER MOSFET ABSOLUTE MAXIMUM RATINGS Rating S Drain to Current Ё C ontinuous Ё Pu lsed Gate-to-Source Voltage Ё C ontinue Ё N on-repetitive Total Power Dissipation T O-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to A...