AUIRGP4066D1-E

AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified * E C G C G E C AUIRGP4066D1 AUIRGP4066D1-E VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.70V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI G C E TO-247AC AUIRGP4066D1 TO-247AD AUIRGP4066D1-E G G ate Standard Pack Form Tube Tube C C ollector E Em itter Complete Part Number Ordering Information Base part number AUIRGP4066D1 AUIRGP4066D1-E Package Type TO-247AC TO-247AD Quantity 25 25 AUIRGP4066D1 AUIRGP4066D1-E Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods...