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HBC123JS6R Dataheets PDF



Part Number HBC123JS6R
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description Dual NPN Digital Transistors
Datasheet HBC123JS6R DatasheetHBC123JS6R Datasheet (PDF)

CYStech Electronics Corp. Dual NPN Digital Transistors Spec. No. : C360S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 1/5 HBC123JS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effec.

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CYStech Electronics Corp. Dual NPN Digital Transistors Spec. No. : C360S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 1/5 HBC123JS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Two DTC123J chips in a SOT-363 package. • Mounting by SOT-323 automatic mounting machines is possible. • Mounting cost and area can be cut in half. • Transistor elements are independent, eliminating interference. • Complements the HBA123JS6R. • Pb-free package. Equivalent Circuit HBC123JS6R Outline SOT-363R RBE2 RB2 TR1 RB1 RBE1 TR2 RB1=2.2kΩ , RB2=2.2 kΩ RBE1=47kΩ , RBE2=47 kΩ HBC123JS6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Each Transistor, Ta=25℃) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded. Spec. No. : C360S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 2/5 Symbol VCC VIN IO IO(max.) Pd Tj Tstg Limits 50 -5~+12 100 100 200 (Note) 150 -55~+150 Unit V V mA mA mW °C °C Characteristics (Each Transistor, Ta=25℃) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. 1.1 80 1.54 17 Typ. 0.1 2.2 21 250 Max. 0.5 0.3 3.6 0.5 2.86 26 Unit V V V mA uA kΩ MHz Test Conditions VCC=5V, IO=100µA VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA VCE=10V, IC=5mA, f =100MHz * * Transition frequency of the device Ordering Information Device HBC123JS6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 7M HBC123JS6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C360S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 3/5 Carrier Tape Dimension HBC123JS6R CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C360S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 4/5 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 secon.


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