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HBC124ES6R Dataheets PDF



Part Number HBC124ES6R
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description Dual NPN Digital Transistors
Datasheet HBC124ES6R DatasheetHBC124ES6R Datasheet (PDF)

CYStech Electronics Corp. Dual NPN Digital Transistors Spec. No. : C363S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 1/6 HBC124ES6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effec.

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CYStech Electronics Corp. Dual NPN Digital Transistors Spec. No. : C363S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 1/6 HBC124ES6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Two DTC124E chips in a SOT-363 package. • Mounting by SOT-323 automatic mounting machines is possible. • Mounting cost and area can be cut in half. • Transistor elements are independent, eliminating interference • Complements the HBA124ES6R • Pb-free package Equivalent Circuit HBC124ES6R Outline SOT-363R RBE2 RB2 TR1 RB1 RBE1 TR2 RB1=22kΩ , RB2=22 kΩ RBE1=22kΩ , RBE2=22 kΩ HBC124ES6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Each Transistor, Ta=25℃) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded. Spec. No. : C363S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 2/6 Symbol VCC VIN IO IO(max.) Pd Tj Tstg Limits 50 -10~+40 30 100 200 (Note) 150 -55~+150 Unit V V mA mA mW °C °C Characteristics (Each Transistor, Ta=25℃) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. 3 56 15.4 0.8 Typ. 0.1 22 1 250 Max. 0.5 0.3 0.36 0.5 28.6 1.2 Unit V V V mA uA kΩ MHz Test Conditions VCC=5V, IO=100µA VO=0.2V, IO=5mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f =100MHz * * Transition frequency of the device Ordering Information Device HBC124ES6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 7B HBC124ES6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves DC Current Gain vs Output Current 1000 1000 Output Voltage---Vo(on)(mV) Spec. No. : C363S6R Issued Date : 2009.04.30 Revised Date : 2011.02.22 Page No. : 3/6 Output Voltage vs Output Current Current Gain--- HFE 100 Vo=5V 100 10 Io/Ii=20 1 0.1 1 10 Output Current---Io(mA) Input Voltage vs Output Current (ON Characteristics) 10 Input Voltage --- Vi(on)(V) Vo=0.2V 10 100 1 10 Output Current ---Io(mA) Output Current vs Input Voltage (OFF Characteristics) 10 Output Current --- Io(mA) 100 Vcc=5V 1 1 0.1 0.1 1 10 Output Current --- Io(mA) Power Derating Curves 250 Power Dissipation---PD(mW) 200 Dual 0.1 100 0.1 1 Input Voltage --- Vi(off)(V) 10 150 Single 100 50 0 0 50 100 150 200 Ambient Temperature --- TA(℃ ) HBC124ES6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No..


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