IRF13N50

SEMICONDUCTOR IRF13N50 Series N-Channel Power MOSFET (14A, 500Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as SMPS, UPS, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. G TO-220AB (IRF13N50A) D (Drain) D D S FEATURES RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 14 500 0.45 @ V GS = 10V 81 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage(Note 1) Drain to Gate voltage Gate to Source voltage Continuous Drain Current TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ V GS =10V, T C =25°C V GS =10V, T C =100°C VALUE 500 500 ±30 14 9.1 56 14 UNIT V Pulsed Drain current (Note 1) Repetitive avalanche current (Note 1) Repetitive avalanch...