MCIRF13N50

MFIRF13N50 MCIRF13N50 POWER MOSFET ID = 13A VDS = 500V RDS(on)MAX = 0.48Ω Description/ Features The MFIRF13N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant ● Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 13 50 500 ±30 150 -55 ~150 Units A A V V ℃ ℃ Case Styles 1、 GATE 2、 DRAIN 3、 SOURCE 1、 GATE 2、 DRAIN 3、 SOURCE Ordering Information Part Number MCIRF13N50 MFIRF13N50 Package TO-220 TO-220F Packaging Tube Tube 1 of 7 http://www.Datasheet4U.com MFIRF13N50 MCIRF13N50 Absolute Maximum Rating (Tamb=25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed Total Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy Symbol VDS VGS IDM PD TJ Tstg. EAS TO-220 TO-220F 150 -55~150 TO-220 TO-220F 750 750 Value 500 ±30 50 190 48 Unit V V A W ℃ ℃ mJ Electrical Characteristics(Tamb=25℃) Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Drain-Source Diode Forward Voltage Forward Trans conductance Gate-Body Leakage Current(Vds=0V) Static Drain-Source On Resistance Thermal Resistance...