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PJD2NA60

Pan Jit International

600V N-Channel MOSFET

PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High s...


Pan Jit International

PJD2NA60

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Description
PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. 600 V Current 2A (Halogen Free) Mechanical Data  Case : TO-251AB ,TO-220AB, ITO-220AB, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams  ITO-220AB Approx. Weight : 0.056 ounces, 1.6 grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams o Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation TC=25 C Derate above 25oC o (Note 1) SYMBOL VDS VGS ID IDM 8 EAS PD TJ,TSTG TO-251AB TO-220AB ITO-220AB TO-252 UNITS V V A A 600 +30 2 115 34 44 0.27 0.35 -55~150 23 0.18 34 0.27 mJ W W/ oC o Operating Junction and Storage Temperature Range Thermal resistance Junction to Case Junction to Ambient C RθJC RθJA 3.67 110 2.84 62.5 5.43 120 3.67 110 o C/W  Limited only By Maximum Junction Temperature March 10,2014-REV.00 Page 1 http://www.Datasheet4U.com PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 Electrical Characteristics (TA=25 C unless otherwise note...




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