30V N-channel Trench MOSFET
MDD1654 – Single N-Channel Trench MOSFET 30V
MDD1654
30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ
General Description...
Description
MDD1654 – Single N-Channel Trench MOSFET 30V
MDD1654
30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ
General Description The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and general purpose applications.
Features VDS = 30V ID = 55A @VGS = 10V RDS(ON) < 6.0mΩ @VGS = 10V < 9.5mΩ @VGS = 4.5V
Absoloute Maximun Ratings (Ta = 25 C)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy
(2) (1)
o
Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C
o o o o o o
Rating 30 ±20 55 40 200 50 25 3 2.1 200 -55~150
Unit V V A A A W W mJ
o
ID IDM PD PDSM EAS TJ, Tstg
Junction and Storage Temperature Range
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
) (1)
Symbol RθJA RθJC
Rating 42 2.5
Unit
o
C/W
August 2008. Version 1.0
1
MagnaChip Semiconductor Ltd.
http://www.Datasheet4U.com
MDD1654 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number MDD1654T MDD1654R Temp. Range -55~150 C o -55~150 C
o
Package D-PAK D-PAK
Packing Tube Tape & Reel
Rohs Status Halogen Free Halogen Free
Electrical Characteristics (Ta =25 C)
Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold...
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