C4418

2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4418 500 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=–0.3A VCB=10V, f=1MHz (Ta=25°C) 2SC4418 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ V V MHz pF Unit µA V 16.9±0.3 8.4±0.2 µA 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.3 ton (µs) 1max tstg (µs) 2.5max tf (µs) 0.5max 2.54 3.9 B C E I C – V CE Characteristics (Typical) 5 1.8 A V CE (sat),V Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) V C E (sat) I C – V BE Temperature Characteristics (Typical) 5 (V C E =4V) 1.4 A 1A 4 Collector Current I C (A) 2 –55˚C (Case Temp) 60 0m A 3 400 mA 125˚C (Case Temp) Collector Current I C (A) 25˚C (Case Temp) 4 3 200 mA 2 100 mA 1 C( 12 25˚ 0 0 1 2 3 4...