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2SC5907

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Silicon NPN Epitaxial Type Transistor

2SC5907 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1603 (Z) Rev.0 Oct. 2002 Features • Super compact pac...


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2SC5907

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2SC5907 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1603 (Z) Rev.0 Oct. 2002 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WK–“. http://www.Datasheet4U.com 2SC5907 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO 15 VCEO 4.0 VEBO 1.5 IC 80 PC 80 Tj Tstg 150 –55 to 150 Ratings Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Collector output capacitance Gain bandwidth product Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE 120 Cre Cob fT(1) 5.0 fT(2) PG NF  15.0 11.0  1.2 14.0  0.45  0.85 7.5 Min 15    Typ   0.1  1.0  0.5 140 170  pF 1.0  GHz  GHz  1.8 dB dB PF Max Unit Test V µA V µA V µA V  conditions IC = 10 µA, IE = 0 CB CE EB = 15 V, IE = 0 = 3.5 V, RBE = Infinite = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, Emitter ground, f = 1 MHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA f = 1 GHz VCE = 1 V, IC = 40 mA f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.0, Oct. 2002, page 2 of 19 2SC5907 Collector Power Dissipation Curve...




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