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DMN4800LSS

Diodes

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5...


Diodes

DMN4800LSS

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DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Features  Lo       w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data  Case:  SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.072g (approximate) Applications  Backlighting  Power Management Functions C Converters  DC-D     SO-8 S S S G D D D D Top View Internal Schematic D G S Equivalent circuit Top View Ordering Information (Note 4) Part Number DMN4800LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-fre...




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