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TPD1036F

Toshiba Semiconductor

2-IN-1 Low-Side Power Switch

TPD1036F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1036F 2-IN-1 Low-Side Powe...


Toshiba Semiconductor

TPD1036F

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Description
TPD1036F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1036F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1036F is a 2-IN-1 low-side switch. The output has a vertical MOSFET, and the input can be directly driven from CMOS or TTL logic (e.g., an MPU). The IC provides intelligent protection functions. Features Two built-in power IC chips with a structure that incorporates a control block and a vertical power MOSFET on each chip. Can be directly driven from a microprocessor, a CMOS logic IC, etc. Overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter) protections are built in. Low ON-resistance: RDS (ON) = 0.5 Ω (max) (@VIN = 5 V, ID = 0.7 A, Tch = 25°C) Low drain cut-off current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C) Low input current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40 to 110°C) Housed in the 8-pin SOP package and supplied in embossed carrier tape. Weight: 0.08 g (typ.) Pin Assignment (top view) Marking SOURCE1 1 IN1 2 SOURCE2 3 IN2 4 8 DRAIN1 7 DRAIN1 6 DRAIN2 5 DRAIN2 TPD1036 F Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb) -Free Finish Note: This product has a MOS structure and is sensitive to electrostatic discharge. 1 2008-09-12 http://www.Datasheet4U.com TPD1036F Block Diagram SOURCE1 1 Overtemperature Detection /Protection IN1 2 Overcurrent Detection /Protection 8 DRAIN1 7 DRAIN1 SOURCE2 3 ...




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