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60N06 Dataheets PDF



Part Number 60N06
Manufacturers UTC
Logo UTC
Description N-CHANNEL POWER MOSFET
Datasheet 60N06 Datasheet60N06 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.  FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( typical 39nC) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115pF) * Avalanche energy Sp.

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UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.  FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( typical 39nC) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115pF) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-263 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60N06L-TA3-T 60N06G-TA3-T 60N06L-TF3-T 60N06G-TF3-T 60N06L-TF1-T 60N06G-TF1-T 60N06L-TQ2-R 60N06G-TQ2-R 60N06L-TQ2-T 60N06G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube 60N06G-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F, TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd. 1 of 8 QW-R502-121.D 60N06 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C TC = 100°C ID 60 A 39 A Drain Current Pulsed (Note 2) IDM 120 A Avalanche Energy Single Pulsed (Note 3) EAS Repetitive (Note 2) EAR 1000 mJ 180 mJ TO-220/TO-263 Power Dissipation (TC=25°C) TO-220F/TO-220F1 PD 100 W 34 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=0.6mH, IAS=60A, VDD=50V, RG=20Ω, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220/TO-263 TO-220F SYMBOL θJA θJC RATINGS 62.5 1.25 3.68 UNIT °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-121.D 60N06 Power MOSFET  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 Drain-Source Leakage Current IDSS VDS=60V, VGS=0V Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS IGSS VGS=20V, VDS=0V VGS=-20V, VDS=0V Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS RDS(ON) VGS=10V, ID=30A Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1MHz Reverse Transfer Capacitance SWITCHING CHARACTERISTICS CRSS Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) QG QGS QGD VDS=30V, VGS=10V, ID=60A IG=10mA (Note 1, 2) Turn-On Delay Time tD(ON) Rise Time Turn-Off Delay Time tR tD(OFF) VDD=30V, VGS=10V, ID=60A, RG =25Ω (Note 1, 2) Fall Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD VGS=0V, IS=60A Reverse Recovery Time Reverse Recovery Charge trr Qrr IS=60A, VGS=0V, dIF/dt=100A/μs Notes: 1. ISD≤60A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 3.Essentially independent of operating temperature. TYP MAX UNIT V 1 μA 100 nA -100 nA 4.0 V 14 18 mΩ 2000 pF 400 pF 115 pF 39 60 nC 12 nC 10 nC 12 30 ns 11 30 ns 25 50 ns 15 30 ns 60 A 120 A 1.6 V 60 ns 3.4 μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-121.D 60N06  TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS + ISD - L Power MOSFET RG Driver VDD * dv/dt controlled by RG Same Type VGS as D.U.T. * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Gate Pulse Pulse Width Period 10V ISD (DUT) VDS (DUT) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-121.D 60N06  TEST CIRCUITS AND WAVEFORMS VDS VGS RG RL VDD 10V Pulse Width≤ 1μs Duty Factor≤0.1% D.U.T. Switching Test Circuit Power MOSFET VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Waveforms Same Type 50kΩ as D.U.T. QG 12V 0.2μF 0.3μF 10V VGS VDS QGS QGD DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS.


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