Document
UNISONIC TECHNOLOGIES CO., LTD 60N06
60A, 60V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION The UTC 60N06 is N-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( typical 39nC) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115pF) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N06L-TA3-T
60N06G-TA3-T
60N06L-TF3-T
60N06G-TF3-T
60N06L-TF1-T
60N06G-TF1-T
60N06L-TQ2-R
60N06G-TQ2-R
60N06L-TQ2-T
60N06G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-263 TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube Tape Reel Tube
60N06G-TA3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F,
TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd.
1 of 8
QW-R502-121.D
60N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C TC = 100°C
ID
60
A
39
A
Drain Current Pulsed (Note 2)
IDM
120
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
1000
mJ
180
mJ
TO-220/TO-263
Power Dissipation (TC=25°C) TO-220F/TO-220F1
PD
100
W
34
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=0.6mH, IAS=60A, VDD=50V, RG=20Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/TO-263 TO-220F
SYMBOL θJA
θJC
RATINGS 62.5 1.25 3.68
UNIT °C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 8
QW-R502-121.D
60N06
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Forward Gate-Source Leakage Current
Reverse ON CHARACTERISTICS
IGSS
VGS=20V, VDS=0V VGS=-20V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
2.0
Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS
RDS(ON) VGS=10V, ID=30A
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance SWITCHING CHARACTERISTICS
CRSS
Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge)
QG QGS QGD
VDS=30V, VGS=10V, ID=60A IG=10mA (Note 1, 2)
Turn-On Delay Time
tD(ON)
Rise Time Turn-Off Delay Time
tR tD(OFF)
VDD=30V, VGS=10V, ID=60A, RG =25Ω (Note 1, 2)
Fall Time
tF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
VGS=0V, IS=60A
Reverse Recovery Time Reverse Recovery Charge
trr Qrr
IS=60A, VGS=0V, dIF/dt=100A/μs
Notes: 1. ISD≤60A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
3.Essentially independent of operating temperature.
TYP MAX UNIT
V 1 μA 100 nA -100 nA
4.0 V 14 18 mΩ
2000
pF
400
pF
115
pF
39 60 nC
12
nC
10
nC
12 30 ns
11 30 ns
25 50 ns
15 30 ns
60 A
120 A
1.6 V
60
ns
3.4
μC
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
3 of 8
QW-R502-121.D
60N06
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
+ ISD
-
L
Power MOSFET
RG
Driver
VDD
* dv/dt controlled by RG
Same Type
VGS
as D.U.T.
* ISD controlled by pulse period * D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
D=
Gate Gate
Pulse Pulse
Width Period
10V
ISD (DUT)
VDS (DUT)
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
4 of 8
QW-R502-121.D
60N06
TEST CIRCUITS AND WAVEFORMS
VDS
VGS RG
RL VDD
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Power MOSFET
VDS 90%
10% VGS
tD(ON) tR
tD(OFF) tF
Switching Waveforms
Same Type
50kΩ
as D.U.T.
QG
12V 0.2μF
0.3μF
10V
VGS
VDS
QGS
QGD
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
L VDS
BVDSS.