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2SK3192. K3192 Datasheet

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2SK3192. K3192 Datasheet






K3192 2SK3192. Datasheet pdf. Equivalent




K3192 2SK3192. Datasheet pdf. Equivalent





Part

K3192

Description

2SK3192

Manufacture

Panasonic Semiconductor

Datasheet
Download K3192 Datasheet


Panasonic Semiconductor K3192

K3192; Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Featu res • Avalanche energy capability gua ranteed • High-speed switching • Lo w ON resistance Ron • No secondary br eakdown 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) 21.0±0.5 φ 3.2±0.1 15.0±0.2 ■ Applications • PDP • Switchin g mode regulator 16.2±0.5 (3.2) (2.3) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±.


Panasonic Semiconductor K3192

0.2 ■ Absolute Maximum Ratings TC = 2 5°C Parameter Drain-source surrender v oltage Gate-source surrender voltage Dr ain current Peak drain current Avalanch e energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 250 ±30 ±30 ±12 0 925 100 3 150 −55 to +150 °C °C U nit V V A A mJ W 5.45±0.3 10.


Panasonic Semiconductor K3192

.9±0.5 123 1: Gate 2: Drain 3: Source EIAJ: SC-92 TOP-3F-B1 Package Marking Symbol: K3192 Internal Connection D No te) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C G ■ Electri cal Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltag e Drain-source cutoff current Gate-sour ce cutoff current Gate threshold voltag e Drain-source ON resista.



Part

K3192

Description

2SK3192

Manufacture

Panasonic Semiconductor

Datasheet
Download K3192 Datasheet




 K3192
Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Features
Avalanche energy capability guaranteed
High-speed switching
Low ON resistance Ron
No secondary breakdown
Applications
PDP
Switching mode regulator
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
250
±30
±30
±120
925
V
V
A
A
mJ
Power dissipation
Channel temperature
Storage temperature
PD 100 W
Ta = 25°C
3
Tch 150 °C
Tstg 55 to +150 °C
Note) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C
10.9±0.5
123
5.45±0.3
1: Gate
2: Drain
3: Source
EIAJ: SC-92
TOP-3F-B1 Package
Marking Symbol: K3192
Internal Connection
D
G
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
VDSS
IDSS
IGSS
Vth
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
VDS = 200 V, VGS =
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0, f = 1 MHz
Short-circuit output capacitance
(Common source)
Coss
Reverse transfer capacitance
(Common source)
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD = 100 V, ID = 15 A, RL = 6.7
VGS = 10 V
S
Min Typ Max
250
00
±1
24
50 68
8 15
4 200
Unit
V
µA
µA
V
m
S
pF
1 600
pF
650 pF
45 ns
115 ns
330 ns
130 ns
Publication date: January 2004
SJG00029BED
1
http://www.Datasheet4U.com





 K3192
2SK3192
Electrical Characteristics (continued) TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
VDSF
trr
Qrr
Qg
Qgs
IDR = 30 A, VGS = 0
L = 230 µH, VDD = 100 V
IDR = 15 A, di/dt = 100 A/µs
VDD = 100 V, ID = 15 A
VGS = 10 V
1.5
260
1.6
95
34
V
ns
µC
nC
nC
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Qgd
Rth(ch-c)
Rth(ch-a)
12 nC
1.25 °C/W
41.7 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
103 Non repetitive pulse
TC = 25°C
IDP
102
t = 100 µs
ID
DC
10
1 ms
10 ms
1 100 ms
101
1
10 102 103
Drain-source voltage VDS (V)
120
(1)
100
PD Ta
(1) TC = Ta
(2) Without heat sink
PD = 3 W
80
60
40
20
(2)
0
0
50
100 150
Ambient temperature Ta (°C)
VGS ID
50
VDS = 10 V
TC = 25°C
40
30
20
10
0
0 2468
10
Drain current ID (A)
RDS(on) ID
100
VGS = 10 V
TC = 25°C
80
60
40
20
0
0 10 20 30
Drain current ID (A)
ID VDS
30
VGS = 10 V
TC = 25°C
25
20
5V
15
10
4.5 V
5
4V
3V
0
0 2 4 6 8 10 12 14
Drain-source voltage VDS (V)
Yfs  ID
30
VDS = 10 V
TC = 25°C
25
20
15
10
5
0
0 5 10 15 20 25 30 35
Drain current ID (A)
2 SJG00029BED





 K3192
Ciss , Coss , Crss VDS
104
f = 1 MHz
TC = 25°C
103
102
10
0 20 40 60 80 100
Drain-source voltage VDS (V)
2SK3192
SJG00029BED
3



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