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2SK2993. K2993 Datasheet

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2SK2993. K2993 Datasheet






K2993 2SK2993. Datasheet pdf. Equivalent




K2993 2SK2993. Datasheet pdf. Equivalent





Part

K2993

Description

2SK2993

Manufacture

Toshiba Semiconductor

Datasheet
Download K2993 Datasheet


Toshiba Semiconductor K2993

K2993; 2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2993 Chopper Regulator, DC−DC Con verter and Motor Drive Applications l L ow drain−source ON resistance l High forward transfer admittance : RDS (ON) = 82 mΩ (typ.) : |Yfs| = 20 S (typ.) Unit: mm l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) l Enhance ment−mode : Vth = 1.5~3.5 V .


Toshiba Semiconductor K2993

(VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics S Drain source voltage Drain−gate voltage (R GS = 20 kΩ) Gate−source voltage Dra in current DC (Not e 1) ymbol VDSS VDGR VGSS ± ID IDP PD 100 EAS 423 IAR EAR 10 Tch 150 Tstg −55~150 ° 20 Rating 250 250 20 20 60 Unit V V V A W mJ A m J °C C Pulse (Note 1) Drain power di ssipation (Tc = 25°C) Single pul.


Toshiba Semiconductor K2993

se avalanche energy (Not Avalanche curre nt Repetitive avalanche energy (Note 3) Channel temperature Storage temperatur e range e 2) JEDEC JEITA TOSHIBA 2-10S 1B Weight: 1.5 g (typ.) ― ― Therm al Characteristics Characteristics S Th ermal resistance, channel to case Therm al resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 83. Max 2 5 3 Unit °C / W °C / W No.



Part

K2993

Description

2SK2993

Manufacture

Toshiba Semiconductor

Datasheet
Download K2993 Datasheet




 K2993
2SK2993
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2993
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 82 m(typ.)
l High forward transfer admittance : |Yfs| = 20 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V)
l Enhancementmode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics S
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Not e 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Not e 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VDGR
VGSS ±
ID
IDP
PD 100
EAS 423
IAR
EAR 10
Tch 150
Tstg
Rating
250
250
20
20
60
20
55~150 °
Unit
V
V
V
A
W
mJ
A
mJ
°C
C
JEDEC
JEITA
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics S
ymbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc) 1.
Rth (cha) 83.
25
3
°C / W
°C / W
Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A,
RG = 25
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-01-25
http://www.Datasheet4U.com





 K2993
Electrical Characteristics (Ta = 25°C)
Characteristics S
ymbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs| V
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 10 A
DS = 10 V, ID = 10 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 200 V, VGS = 10 V, ID = 20 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Not e 1)
Pulse drain reverse current
(Not e 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK2993
Min Typ.
——
——
250 —
1.5 —
— 82
10 20
4000
— 300
— 1000
Max
±10
100
3.5
105
Unit
µA
µA
V
V
m
S
pF
15 —
— 35 —
ns
— 30 —
— 180 —
— 100 —
— 70 — nC
— 30
Min Typ. Max Unit
— — 20 A
— — 60
— 3.
2.0
300 —
3—
A
V
ns
µC
2 2002-01-25





 K2993
2SK2993
3 2002-01-25



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