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2SK2639-01. K2639-01 Datasheet

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2SK2639-01. K2639-01 Datasheet






K2639-01 2SK2639-01. Datasheet pdf. Equivalent




K2639-01 2SK2639-01. Datasheet pdf. Equivalent





Part

K2639-01

Description

2SK2639-01

Manufacture

Fuji Electric

Datasheet
Download K2639-01 Datasheet


Fuji Electric K2639-01

K2639-01; 2SK2639-01 FAP-IIS Series > Features Hig h Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power H igh Voltage VGS = ± 30V Guarantee Repe titive Avalanche Rated N-channel MOS-F ET 450V 0,65Ω 10A 100W > Outline Drawing > Applications Switching Regul ators UPS DC-DC converters General Purp ose Power Amplifier > Maximum Ratings and Characteristics -.


Fuji Electric K2639-01

Absolute Maximum Ratings T( C=25°C), u nless otherwise specified > Equivalent Circuit Rating 450 10 40 ±35 10 255 1 00 150 -55 ~ +150 Unit V A A V A mJ W C °C Item Drain-Source-Voltage Conti nous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non- Repetitive (Tc h ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature .


Fuji Electric K2639-01

Range Symbol V DS ID I D(puls) V GS I A R E AS PD T ch T stg - Electrical Char acteristics (TC=25°C), Item Drain-Sour ce Breakdown-Voltage Gate Threshhold Vo ltage Zero Gate Voltage Drain Current G ate Source Leakage Current Drain Source On-State Resistance Forward Transcondu ctance Input Capacitance Output Capacit ance Reverse Transfer Capacitance Turn- On-Time ton (ton=td.



Part

K2639-01

Description

2SK2639-01

Manufacture

Fuji Electric

Datasheet
Download K2639-01 Datasheet




 K2639-01
2SK2639-01
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum RatingsT( C=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
450
Continous Drain Current
I D 10
Pulsed Drain Current
I D(puls)
40
Gate-Source-Voltage
V GS
±35
Repetitive or Non-Repetitive (Thc 150°C)
I AR
10
Avalanche Energy
E AS
255
Max. Power Dissipation
P D 100
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
450V 0,65Ω 10A 100W
> Outline Drawing
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS= VGS
Zero Gate Voltage Drain Current
I DSS
VDS=450V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±35V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=5A
VGS=10V
Forward Transconductance
g fs ID=5A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=10A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V T ch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs T ch=25°C
Min.
450
3,5
3
10
Typ. Max.
4,0
10
0,2
10
0,58
6
950
180
80
25
70
70
50
4,5
500
1,0
100
0,65
1450
270
120
40
110
110
80
1,1 1,65
400
5,0
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
35 °C/W
1,25 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
http://www.Datasheet4U.com





 K2639-01
N-channel MOS-FET
450V 0,65Ω 10A 100W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2639-01
FAP-IIS Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=10A; Tc=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
8
↑↑
9
VDS [V]
Avalanche Energy Derating
Eas=f(starting Tch); VCC=45V; IAV=10A
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
Starting Tch [°C]
VDS [V]
This specification is subject to change without notice!
t [s]








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