HBC8471S6R

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistors Spec. No. : C202S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 1/6 (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Low Cob. Typ. Cob=2.0pF. Pb-free package. Equivalent Circuit HBC8471S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded. HBC8471S6R CYStek Product Specification http://www.Datasheet4U.com Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 60 50 6 200 200(total) 150 -55~+150 (Note) Unit V V V mA mW °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE hFE fT Cob Min. 60 50 6 200 25 80 Typ. 160 2 Max. 100 100 0.3 1 560 4 Unit V V V nA nA V V MHz pF Spec. No. : C202S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 2/6 Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=12V, IC=2mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cy...