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NPN Transistor. HBC8471S6R Datasheet

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NPN Transistor. HBC8471S6R Datasheet






HBC8471S6R Transistor. Datasheet pdf. Equivalent




HBC8471S6R Transistor. Datasheet pdf. Equivalent





Part

HBC8471S6R

Description

NPN Transistor

Manufacture

CYStech Electronics

Datasheet
Download HBC8471S6R Datasheet


CYStech Electronics HBC8471S6R

HBC8471S6R; CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistors Spe c. No. : C202S6R Issued Date : 2010.03. 22 Revised Date : 2011.02.22 Page No. : 1/6 (dual transistors) HBC8471S6R Fe atures • Two BTC2412 chips in a SOT-3 63R package. • Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interferenc.


CYStech Electronics HBC8471S6R

e. • Mounting cost and area can be cut in half. • Low Cob. Typ. Cob=2.0pF. • Pb-free package. Equivalent Circui t HBC8471S6R Outline SOT-363R Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ra tings (Ta=25°C) Parameter Collector-Ba se Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Po wer Dissipation Junction .


CYStech Electronics HBC8471S6R

Temperature Storage Temperature Note : 1 50mW per element must not be exceeded. HBC8471S6R CYStek Product Specification http://www.Datasheet4U.com Symbol VCB O VCEO VEBO IC PD Tj Tstg Limits 60 50 6 200 200(total) 150 -55~+150 (Note) Unit V V V mA mW °C °C CYStech Elec tronics Corp. Characteristics (Ta=25°C ) Symbol BVCBO BVCEO BVEBO ICBO IEBO VC E(sat) VBE(sat) hFE h.



Part

HBC8471S6R

Description

NPN Transistor

Manufacture

CYStech Electronics

Datasheet
Download HBC8471S6R Datasheet




 HBC8471S6R
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
(dual transistors)
HBC8471S6R
Spec. No. : C202S6R
Issued Date : 2010.03.22
Revised Date : 2011.02.22
Page No. : 1/6
Features
Two BTC2412 chips in a SOT-363R package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Low Cob. Typ. Cob=2.0pF.
Pb-free package.
Equivalent Circuit
HBC8471S6R
Outline
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits
60
50
6
200
200(total)
150
-55~+150
(Note)
Unit
V
V
V
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
HBC8471S6R
CYStek Product Specification
http://www.Datasheet4U.com





 HBC8471S6R
CYStech Electronics Corp.
Spec. No. : C202S6R
Issued Date : 2010.03.22
Revised Date : 2011.02.22
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
hFE
fT
Cob
Min.
60
50
6
-
-
-
-
200
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
160
2
Max.
-
-
-
100
100
0.3
1
560
-
-
4
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=12V, IC=2mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HBC8471S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
CH
HBC8471S6R
CYStek Product Specification





 HBC8471S6R
CYStech Electronics Corp.
Spec. No. : C202S6R
Issued Date : 2010.03.22
Revised Date : 2011.02.22
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=1V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100 100
10
0.1
1 10 100
Collector Current ---IC (mA)
1000
Saturation Voltage vs Collector Current
10000
VBE(SAT)@IC=10IB
1000
10
0.1
1 10 100
Collector Current---IC (mA)
1000
Cutoff Frequency vs Collector Current
1000
100 FT@VCE=12V
100
0.1
250
200
150
100
50
0
0
1 10 100
Collector Current ---IC (mA)
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature ---Ta(℃ )
1000
200
HBC8471S6R
10
0.1
1 10
Collector Current --- IC(mA)
100
CYStek Product Specification



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