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Digital Transistors. HBCA123JS6R Datasheet

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Digital Transistors. HBCA123JS6R Datasheet






HBCA123JS6R Transistors. Datasheet pdf. Equivalent




HBCA123JS6R Transistors. Datasheet pdf. Equivalent





Part

HBCA123JS6R

Description

PNP and NPN Dual Digital Transistors



Feature


CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 6S6R Issued Date : 2013.08.23 Revised D ate : 2013.09.04 Page No. : 1/8 HBCA12 3JS6R Features •Built-in bias resisto rs enable the configuration of an inver ter circuit without connecting external input resistors (see equivalent circui t). •The bias resistors consist of th in-film resistors with.
Manufacture

CYStech Electronics

Datasheet
Download HBCA123JS6R Datasheet


CYStech Electronics HBCA123JS6R

HBCA123JS6R; complete isolation to allow positive bi asing of the input for PNP transistor, and negative biasing of the input for N PN transistor. They also have the advan tage of almost completely eliminating p arasitic effects. •Only the on/off co nditions need to be set for operation, making device design easy. •One DTA12 3J chip and one DTC123J chip in a SOT-3 63 package. •Mounting .


CYStech Electronics HBCA123JS6R

by SOT-323 automatic mounting machines i s possible. •Mounting cost and area c an be cut in half. •Transistor elemen ts are independent, eliminating interfe rence. •Pb-free lead plating and halo gen-free package. Equivalent Circuit H BCA123JS6R RBE2 RB2 TR1 RB1 RBE1 TR2 O utline SOT-363R RB1=2.2kΩ , RB2=2.2k RBE1=47kΩ , RBE2=47kΩ Ordering Inf ormation Device HBCA123JS6R .


CYStech Electronics HBCA123JS6R

Package Shipping Marking SOT-363 3000 pc s / Tape & 35 Reel (Pb-free lead platin g and halogen-free package) CYStek Prod uct Specification http://www.Datasheet4 U.com HBCA123JS6R CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25 ) Parameter Supply Voltage Input Volt age Output Current Total Power Dissipat ion Junction Temperature Storage Temper ature Note : 120mW p.

Part

HBCA123JS6R

Description

PNP and NPN Dual Digital Transistors



Feature


CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 6S6R Issued Date : 2013.08.23 Revised D ate : 2013.09.04 Page No. : 1/8 HBCA12 3JS6R Features •Built-in bias resisto rs enable the configuration of an inver ter circuit without connecting external input resistors (see equivalent circui t). •The bias resistors consist of th in-film resistors with.
Manufacture

CYStech Electronics

Datasheet
Download HBCA123JS6R Datasheet




 HBCA123JS6R
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA123JS6R
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 1/8
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA123J chip and one DTC123J chip in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBCA123JS6R
RBE2
RB2
TR1
RBE1
RB1
TR2
RB1=2.2kΩ , RB2=2.2kΩ
RBE1=47kΩ , RBE2=47kΩ
Outline
SOT-363R
Ordering Information
Device
HBCA123JS6R
Package
Shipping Marking
SOT-363
3000 pcs / Tape &
(Pb-free lead plating and halogen-free package)
Reel
35
HBCA123JS6R
CYStek Product Specification
http://www.Datasheet4U.com




 HBCA123JS6R
CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 2/8
Absolute Maximum Ratings (Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note : 120mW per element must not be exceeded.
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-5~+12
-12~+5
100 -100
100 -100
150 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Limit
833
357
Unit
°C/W
°C/W
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100μA
VI(on) 1.1
-
- V VO=0.3V, IO=5mA
VO(on)
-
- 0.3 V IO/II=5mA/0.25mA
II - - 3.6 mA VI=5V
IO(off)
-
- 0.5 μA VCC=50V, VI=0V
GI 80 -
- - VO=5V, IO=10mA
R1 1.54 2.2 2.86 kΩ -
R2/R1 17 21 26 - -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
HBCA123JS6R
CYStek Product Specification




 HBCA123JS6R
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 3/8
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on) -1.1
-
- V VO=-0.3V, IO=-5mA
VO(on)
-
- -0.3 V IO/II=-5mA/-0.25mA
II - - -3.6 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 80 -
- - VO=-5V, IO=-10mA
R1 1.54 2.2 2.86 kΩ -
R2/R1 17 21 26 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
HBCA123JS6R
CYStek Product Specification






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