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Digital Transistors. HBCA124ES6R Datasheet

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Digital Transistors. HBCA124ES6R Datasheet






HBCA124ES6R Transistors. Datasheet pdf. Equivalent




HBCA124ES6R Transistors. Datasheet pdf. Equivalent





Part

HBCA124ES6R

Description

PNP and NPN Dual Digital Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBCA124ES6R Datasheet


CYStech Electronics HBCA124ES6R

HBCA124ES6R; CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 3S6R Issued Date : 2011.04.01 Revised D ate : 2013.09.06 Page No. : 1/8 HBCA12 4ES6R Features •Built-in bias resisto rs enable the configuration of an inver ter circuit without connecting external input resistors (see equivalent circui t). •The bias resistors consist of th in-film resistors with.


CYStech Electronics HBCA124ES6R

complete isolation to allow positive bi asing of the input for PNP transistor, and negative biasing of the input for N PN transistor. They also have the advan tage of almost completely eliminating p arasitic effects. •Only the on/off co nditions need to be set for operation, making device design easy. •One DTA12 4E chip and one DTC124E chip in a SOT-3 63 package. •Mounting .


CYStech Electronics HBCA124ES6R

by SOT-323 automatic mounting machines i s possible. •Mounting cost and area c an be cut in half. •Transistor elemen ts are independent, eliminating interfe rence. •Pb-free lead plating and halo gen-free package. Equivalent Circuit H BCA124ES6R RBE2 RB2 TR1 RB1 RBE1 TR2 O utline SOT-363 RB1=22kΩ , RB2=22 kΩ RBE1=22kΩ , RBE2=22 kΩ Ordering Info rmation Device HBCA124ES6R-0.



Part

HBCA124ES6R

Description

PNP and NPN Dual Digital Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBCA124ES6R Datasheet




 HBCA124ES6R
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA124ES6R
Spec. No. : C153S6R
Issued Date : 2011.04.01
Revised Date : 2013.09.06
Page No. : 1/8
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA124E chip and one DTC124E chip in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBCA124ES6R
RBE2
RB2
TR1
RBE1
RB1
TR2
RB1=22kΩ , RB2=22 kΩ
RBE1=22kΩ , RBE2=22 kΩ
Outline
SOT-363
Ordering Information
Device
HBCA124ES6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
Marking
3000 pcs / Tape & Reel 12
HBCA124ES6R
CYStek Product Specification
http://www.Datasheet4U.com





 HBCA124ES6R
CYStech Electronics Corp.
Spec. No. : C153S6R
Issued Date : 2011.04.01
Revised Date : 2013.09.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-10~+40
-40~+10
30 -30
100 -100
200 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100µA
VI(on)
3
-
- V VO=0.2V, IO=5mA
VO(on)
-
0.1 0.3 V IO/II=10mA/0.5mA
II - - 0.36 mA VI=5V
IO(off)
-
- 0.5 uA VCC=50V, VI=0V
GI 56 -
- - VO=5V, IO=5mA
R1 15.4 22 28.6 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on)
-3
-
- V VO=-0.2V, IO=-5mA
VO(on) - -0.1 -0.3 V IO/II=-10mA/-0.5mA
II - - -0.36 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 56 -
- - VO=-5V, IO=-5mA
R1 15.4 22 28.6 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz*
* Transition frequency of the device
HBCA124ES6R
CYStek Product Specification





 HBCA124ES6R
CYStech Electronics Corp.
Spec. No. : C153S6R
Issued Date : 2011.04.01
Revised Date : 2013.09.06
Page No. : 3/8
Characteristic Curves
•Tr1(NPN)
1000
DC Current Gain vs Output Current
Output Voltage vs Output Current
1000
100
Vo=5V
10
1
0.1
10
1 10
Output Current---Io(mA)
100
Input Voltage vs Output Current (ON
Characteristics)
Vo=0.2V
1
100
10
1
10
Io/Ii=20
10
Output Current ---Io(mA)
100
Output Current vs Input Voltage (OFF
Characteristics)
Vcc=5V
1
0.1
0.1
1 10
Output Current --- Io(mA)
100
0.1
0.1
1
Input Voltage --- Vi(off)(V)
10
HBCA124ES6R
CYStek Product Specification



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