DatasheetsPDF.com

Digital Transistors. HBCA143TC6 Datasheet

DatasheetsPDF.com

Digital Transistors. HBCA143TC6 Datasheet






HBCA143TC6 Transistors. Datasheet pdf. Equivalent




HBCA143TC6 Transistors. Datasheet pdf. Equivalent





Part

HBCA143TC6

Description

PNP and NPN Dual Digital Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBCA143TC6 Datasheet


CYStech Electronics HBCA143TC6

HBCA143TC6; CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 4C6 Issued Date : 2010.09.29 Revised Da te : 2012.07.19 Page No. : 1/7 HBCA143 TC6 Features •Built-in bias resistors enable the configuration of an inverte r circuit without connecting external i nput resistors (see equivalent circuit) . •The bias resistors consist of thin -film resistors with c.


CYStech Electronics HBCA143TC6

omplete isolation to allow positive bias ing of the input for PNP transistor, an d negative biasing of the input for NPN transistor. They also have the advanta ge of almost completely eliminating par asitic effects. •Only the on/off cond itions need to be set for operation, ma king device design easy. •One DTA143T chip and one DTC143T chip in a SOT-563 package. •Mounting by.


CYStech Electronics HBCA143TC6

SOT-523 automatic mounting machines is possible. •Mounting cost and area can be cut in half. •Transistor elements are independent, eliminating interfere nce. •Pb-free and halogen-free packag e. Equivalent Circuit HBCA143TC6 Outl ine SOT-563 C1 B2 E2 RB2 TR1 RB1 TR2 RB1=4.7kΩ , RB2=4.7 kΩ E1 B1 C2 O rdering Information Device HBCA143TC6 P ackage SOT-563 (Pb-free an.



Part

HBCA143TC6

Description

PNP and NPN Dual Digital Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBCA143TC6 Datasheet




 HBCA143TC6
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA143TC6
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 1/7
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA143T chip and one DTC143T chip in a SOT-563 package.
Mounting by SOT-523 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free and halogen-free package.
Equivalent Circuit
HBCA143TC6
RB2
TR1
RB1
TR2
Outline
C1
SOT-563
B2 E2
RB1=4.7kΩ , RB2=4.7 kΩ
E1 B1 C2
Ordering Information
Device
HBCA143TC6
Package
SOT-563
(Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
16
HBCA143TC6
CYStek Product Specification
http://www.Datasheet4U.com





 HBCA143TC6
CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 2/7
Absolute Maximum Ratings (Ta=25)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note : 120mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
50 -50
5 -5
100 -100
150 (Note)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
VCBO
50
-
-
V IC=50μA
Collector-Emitter Breakdown Voltage VCEO 50 - - V IC=1mA
Emitter-Base Breakdown Voltage
VEBO 5 - - V IE=50μA
Collector-Base Cutoff Current
ICBO - - 0.5 μA VCB=50V
Emitter-Base Cutoff Current
IEBO - - 0.5 μA VEB=4V
Collector-Emitter Saturation Voltage VCE(sat) -
- 0.3 V IC=5mA, IB=0.25mA
DC Current Gain
hFE 100 - 600 - VCE=5V, IC=1mA
Input Resistance
R 3.29 4.7 6.11 kΩ -
Transition Frequency
fT - 250 - MHz VCE=10V, IE=5mA, f=100MHz*
* Transition frequency of the device
•Tr2(PNP)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
BVCBO -50 -
- V IC=-50μA
BVCEO -50 -
- V IC=-1mA
BVEBO -5 -
- V IE=-50μA
ICBO - - -0.5 μA VCB=-50V
IEBO - - -0.5 μA VEB=-4V
VCE(sat) - 0.1 -0.3 V IC=-5mA, IB=-0.25mA
hFE 100 - 600 - VCE=-5V, IC=-1mA
R 3.29 4.7 6.11 kΩ -
fT - 250 - MHz VCE=-10V, IC=-5mA,f=100MHz *
* Transition frequency of the device
HBCA143TC6
CYStek Product Specification





 HBCA143TC6
CYStech Electronics Corp.
Typical Characteristics
•Tr1(NPN)
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 3/7
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000 1000
100
HFE@VCE=5V
10
0.1
1 10
Collector Current --IC(mA)
100
•Tr2(PNP)
Current Gain vs Collector Current
1000
VCE=5V
100
10
1
VCESAT@IC=20IB
10
Collector Current --- IC(mA)
100
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=20IB
100
100
0.1
1 10
Collector Current---IC (mA)
100
10
0.1
1 10
Collector Current---IC (mA)
100
HBCA143TC6
CYStek Product Specification



Recommended third-party HBCA143TC6 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)