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Digital Transistors. HBCA144EC6 Datasheet

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Digital Transistors. HBCA144EC6 Datasheet






HBCA144EC6 Transistors. Datasheet pdf. Equivalent




HBCA144EC6 Transistors. Datasheet pdf. Equivalent





Part

HBCA144EC6

Description

PNP and NPN Dual Digital Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBCA144EC6 Datasheet


CYStech Electronics HBCA144EC6

HBCA144EC6; CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 5C6 Issued Date : 2013.10.02 Revised Da te : Page No. : 1/7 HBCA144EC6 Feature s •Built-in bias resistors enable the configuration of an inverter circuit w ithout connecting external input resist ors (see equivalent circuit). •The bi as resistors consist of thin-film resis tors with complete iso.


CYStech Electronics HBCA144EC6

lation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor . They also have the advantage of almos t completely eliminating parasitic effe cts. •Only the on/off conditions need to be set for operation, making device design easy. •One DTA144E chip and o ne DTC144E chip in a SOT-563 package. Mounting by SOT-523 au.


CYStech Electronics HBCA144EC6

tomatic mounting machines is possible. Mounting cost and area can be cut in half. •Transistor elements are indepe ndent, eliminating interference. •Pb- free lead plating and halogen-free pack age. Equivalent Circuit HBCA144EC6 RBE 2 RB2 TR1 RB1 RBE1 TR2 Outline SOT-563 C1 B2 E2 RB1=47kΩ , RB2=47kΩ RBE1=4 7kΩ , RBE2=47kΩ E1 B1 C2 Ordering Information Device HBCA144E.



Part

HBCA144EC6

Description

PNP and NPN Dual Digital Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBCA144EC6 Datasheet




 HBCA144EC6
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA144EC6
Spec. No. : C155C6
Issued Date : 2013.10.02
Revised Date :
Page No. : 1/7
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA144E chip and one DTC144E chip in a SOT-563 package.
Mounting by SOT-523 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBCA144EC6
RBE2
RB2
TR1
RBE1
RB1
TR2
Outline
C1
SOT-563
B2 E2
RB1=47kΩ , RB2=47kΩ
RBE1=47kΩ , RBE2=47kΩ
E1 B1 C2
Ordering Information
Device
HBCA144EC6-0-T1-G
Package
SOT-563
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
HBCA144EC6
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
http://www.Datasheet4U.com





 HBCA144EC6
CYStech Electronics Corp.
Spec. No. : C155C6
Issued Date : 2013.10.02
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-10~+40
-40~+10
30 -30
100 -100
150 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 120mW per element must not be exceeded.
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100μA
VI(on)
3
-
- V VO=0.3V, IO=2mA
VO(on)
-
- 0.3 V IO/II=10mA/0.5mA
II - - 0.18 mA VI=5V
IO(off)
-
- 0.5 μA VCC=50V, VI=0V
GI 68 -
- - VO=5V, IO=5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on)
-3
-
- V VO=-0.3V, IO=-2mA
VO(on)
-
- -0.3 V IO/II=-10mA/-0.5mA
II - - -0.18 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 68 -
- - VO=-5V, IO=-5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA144EC6
CYStek Product Specification





 HBCA144EC6
CYStech Electronics Corp.
Spec. No. : C155C6
Issued Date : 2013.10.02
Revised Date :
Page No. : 3/7
Characteristic Curves
•Tr1(NPN)
DC Current Gain vs Output Current
1000
Output Voltage vs Output Current
1000
100
Vo = 5V
10
1
0.1
1 10
Output Current --Io(mA)
100
Input Voltage vs Output Current (ON Characteristics)
10
Vo = 0.3V
1
100
Io / Ii = 20
10
11
0
Output Current ---Io(mA)
Output Current vs Input Voltage (OFF
Characteristics)
10
100
Vcc = 5V
1
0.1 0.1
0.1 1
10 100
0.1
1
10
Output Current --- Io(mA)
Input Voltage --- Vi(off)(V)
HBCA144EC6
CYStek Product Specification



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