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Digital Transistors. HBCA144ES6R Datasheet

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Digital Transistors. HBCA144ES6R Datasheet






HBCA144ES6R Transistors. Datasheet pdf. Equivalent




HBCA144ES6R Transistors. Datasheet pdf. Equivalent





Part

HBCA144ES6R

Description

PNP and NPN Dual Digital Transistors



Feature


CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 5S6R Issued Date : 2010.02.04 Revised D ate : 2013.09.06 Page No. : 1/8 HBCA14 4ES6R Features •Built-in bias resisto rs enable the configuration of an inver ter circuit without connecting external input resistors (see equivalent circui t). •The bias resistors consist of th in-film resistors with.
Manufacture

CYStech Electronics

Datasheet
Download HBCA144ES6R Datasheet


CYStech Electronics HBCA144ES6R

HBCA144ES6R; complete isolation to allow positive bi asing of the input for PNP transistor, and negative biasing of the input for N PN transistor. They also have the advan tage of almost completely eliminating p arasitic effects. •Only the on/off co nditions need to be set for operation, making device design easy. •One DTA14 4E chip and one DTC144E chip in a SOT-3 63 package. •Mounting .


CYStech Electronics HBCA144ES6R

by SOT-323 automatic mounting machines i s possible. •Mounting cost and area c an be cut in half. •Transistor elemen ts are independent, eliminating interfe rence. •Pb-free lead plating and halo gen-free package. Equivalent Circuit H BCA144ES6R RBE2 RB2 TR1 RB1 RBE1 TR2 O utline SOT-363 RB1=47kΩ , RB2=47kΩ R BE1=47kΩ , RBE2=47kΩ Ordering Inform ation Device HBCA144ES6R-0-T.


CYStech Electronics HBCA144ES6R

1-G Package SOT-363 (Pb-free lead plati ng and halogen-free package) Shipping 3000 pcs / Tape & Reel Marking 13 HBC A144ES6R CYStek Product Specification http://www.Datasheet4U.com CYStech Ele ctronics Corp. Absolute Maximum Ratings (Ta=25℃) Parameter Supply Voltage In put Voltage Output Current Total Power Dissipation Junction Temperature Storag e Temperature Note :.

Part

HBCA144ES6R

Description

PNP and NPN Dual Digital Transistors



Feature


CYStech Electronics Corp. PNP and NPN Du al Digital Transistors Spec. No. : C15 5S6R Issued Date : 2010.02.04 Revised D ate : 2013.09.06 Page No. : 1/8 HBCA14 4ES6R Features •Built-in bias resisto rs enable the configuration of an inver ter circuit without connecting external input resistors (see equivalent circui t). •The bias resistors consist of th in-film resistors with.
Manufacture

CYStech Electronics

Datasheet
Download HBCA144ES6R Datasheet




 HBCA144ES6R
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA144ES6R
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 1/8
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA144E chip and one DTC144E chip in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBCA144ES6R
RBE2
RB2
TR1
RBE1
RB1
TR2
RB1=47kΩ , RB2=47kΩ
RBE1=47kΩ , RBE2=47kΩ
Outline
SOT-363
Ordering Information
Device
Package
Shipping
Marking
HBCA144ES6R-0-T1-G
SOT-363
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
13
HBCA144ES6R
CYStek Product Specification
http://www.Datasheet4U.com




 HBCA144ES6R
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-10~+40
-40~+10
30 -30
100 -100
150 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 120mW per element must not be exceeded.
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100μA
VI(on)
3
-
- V VO=0.3V, IO=2mA
VO(on)
-
- 0.3 V IO/II=10mA/0.5mA
II - - 0.18 mA VI=5V
IO(off)
-
- 0.5 μA VCC=50V, VI=0V
GI 68 -
- - VO=5V, IO=5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on)
-3
-
- V VO=-0.3V, IO=-2mA
VO(on)
-
- -0.3 V IO/II=-10mA/-0.5mA
II - - -0.18 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 68 -
- - VO=-5V, IO=-5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA144ES6R
CYStek Product Specification




 HBCA144ES6R
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 3/8
Characteristic Curves
•Tr1(NPN)
DC Current Gain vs Output Current
1000
Output Voltage vs Output Current
1000
100
Vo = 5V
10
1
0.1
1 10
Output Current --Io(mA)
100
Input Voltage vs Output Current (ON Characteristics)
10
Vo = 0.3V
1
100
Io / Ii = 20
10
11
0
Output Current ---Io(mA)
Output Current vs Input Voltage (OFF
Characteristics)
10
100
Vcc = 5V
1
0.1 0.1
0.1 1
10 100
0.1
1
10
Output Current --- Io(mA)
Input Voltage --- Vi(off)(V)
HBCA144ES6R
CYStek Product Specification






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