DatasheetsPDF.com

Planar Transistor. HBN2515S6R Datasheet

DatasheetsPDF.com

Planar Transistor. HBN2515S6R Datasheet






HBN2515S6R Transistor. Datasheet pdf. Equivalent




HBN2515S6R Transistor. Datasheet pdf. Equivalent





Part

HBN2515S6R

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech Electronics

Datasheet
Download HBN2515S6R Datasheet


CYStech Electronics HBN2515S6R

HBN2515S6R; CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C223S6-A Issued Date : 2007.07.18 Re vised Date :2011.02.22 Page No. : 1/6 HBN2515S6R (Dual Transistors) Features • Two BTD2515 chips in a SOT-363 pack age. • Mounting possible with SOT-323 automatic mounting machines. • Trans istor elements are independent, elimina ting interference. • Mou.


CYStech Electronics HBN2515S6R

nting cost and area can be cut in half. • Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA. • Weight : 9.1mg, approximately. • Pb-free pack age. Equivalent Circuit HBN2515S6R Ou tline SOT-363 Tr1 Tr2 The following characteristics apply to both Tr1 and T r2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collec tor-Emitter Voltage Emitt.


CYStech Electronics HBN2515S6R

er-Base Voltage Collector Current (DC) C ollector Current (Pulse) Power Dissipat ion Junction Temperature Storage Temper ature Note : 1.Single pulse, Pw=10ms 2. 150mW per element must not be exceeded. HBN2515S6R CYStek Product Specificatio n http://www.Datasheet4U.com Symbol VC BO VCEO VEBO IC ICP Pd Tj Tstg Limits 20 15 6 800 1.5 (Note 1) 200 (total) (N ote 2) 150 -55~+15.



Part

HBN2515S6R

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech Electronics

Datasheet
Download HBN2515S6R Datasheet




 HBN2515S6R
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
HBN2515S6R
(Dual Transistors)
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 1/6
Features
Two BTD2515 chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA.
Weight : 9.1mg, approximately.
Pb-free package.
Equivalent Circuit
HBN2515S6R
Outline
SOT-363
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
20
15
6
800
1.5 (Note 1)
200 (total) (Note 2)
150
-55~+150
Unit
V
V
V
mA
A
mW
°C
°C
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
HBN2515S6R
CYStek Product Specification
http://www.Datasheet4U.com





 HBN2515S6R
CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*RCE(sat)
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
20
15
6
-
-
-
-
-
-
-
-
160
180
150
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
6.5
Max.
-
-
-
100
100
25
150
250
500
1.1
0.9
-
560
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mΩ
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=2mA, IB=0
IE=100μA, IC=0
VCB=15V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0.5mA
IC=200mA, IB=10mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=2V, IC=100mA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HBN2515S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
BS
HBN2515S6R
CYStek Product Specification





 HBN2515S6R
CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
VCE=2V
100
10
1
VCE=1V
10 100
Collector Current---IC (mA)
1000
100
10
1
VCESAT@IC= 20 IB
VCESAT@IC=10IB
10 100
Collector Current---IC(mA)
1000
10000
1000
Saturation Voltage vs Collector Current
VBESAT@IC= 10 IB
On Voltage vs Collector Current
1000
VBEON@VCE=2V
100
1
250
200
150
100
50
0
0
10 100
Collector Current---IC (mA)
Power Derating Curve
1000
Dual
Single
50 100 150
Ambient Temeprature---TA(℃)
200
100
1
10 100
Collector Current---IC(mA)
1000
HBN2515S6R
CYStek Product Specification



Recommended third-party HBN2515S6R Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)