HBN2515S6R

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C223S6-A Issued Date : 2007.07.18 Revised Date :2011.02.22 Page No. : 1/6 HBN2515S6R (Dual Transistors) Features Two BTD2515 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA. Weight : 9.1mg, approximately. Pb-free package. Equivalent Circuit HBN2515S6R Outline SOT-363 Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1.Single pulse, Pw=10ms 2.150mW per element must not be exceeded. HBN2515S6R CYStek Product Specification http://www.Datasheet4U.com Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 20 15 6 800 1.5 (Note 1) 200 (total) (Note 2) 150 -55~+150 Unit V V V mA A mW °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *RCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 20 15 6 160 180 150 100 Typ. 300 6.5 Max. 100 100 25 150 250 500 1.1 0.9 560 Unit V V V nA nA mV mV mV mΩ V V MHz pF Spec. No. : C223S6-A Issued Date : 2007.07.18 Revised Date :2011...