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Planar Transistor. HBN3101S6R Datasheet

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Planar Transistor. HBN3101S6R Datasheet






HBN3101S6R Transistor. Datasheet pdf. Equivalent




HBN3101S6R Transistor. Datasheet pdf. Equivalent





Part

HBN3101S6R

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech Electronics

Datasheet
Download HBN3101S6R Datasheet


CYStech Electronics HBN3101S6R

HBN3101S6R; CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/6 HBN3101S6R (Dual Trans istors) Features • Two BF422 chips in a SOT-363 package. • Mounting possib le with SOT-323 automatic mounting mach ines. • Transistor elements are indep endent, eliminating interference. • M ounting cost and area can .


CYStech Electronics HBN3101S6R

be cut in half. • High BVCEO, BVCEO≧ 300V • Pb-free lead plating and halog en-free package. Equivalent Circuit HB N3101S6R Outline SOT-363 Tr1 Tr2 Or dering Information Device HBN3101S6R-0- T1-G Package SOT-363 (Pb-free lead plat ing and halogen-free package) Shipping 3000 pcs / tape & reel Environment fri endly grade : S for RoHS compliant prod ucts, G for RoHS complia.


CYStech Electronics HBN3101S6R

nt and green compound products Packing s pec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank pro ducts Product name HBN3101S6R CYStek Product Specification http://www.Datash eet4U.com CYStech Electronics Corp. Th e following characteristics apply to bo th Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vo ltage Collector-Emitt.



Part

HBN3101S6R

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech Electronics

Datasheet
Download HBN3101S6R Datasheet




 HBN3101S6R
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
HBN3101S6R
(Dual Transistors)
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 1/6
Features
Two BF422 chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
High BVCEO, BVCEO300V
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBN3101S6R
Outline
SOT-363
Tr1 Tr2
Ordering Information
Device
HBN3101S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBN3101S6R
CYStek Product Specification
http://www.Datasheet4U.com





 HBN3101S6R
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 2/6
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
300
300
5
100
300 (Note 1)
200 (total) (Note 2)
150
-55~+150
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
Unit
V
V
V
mA
mA
mW
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
300
300
5
-
-
-
-
100
15
60
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
300
900
250
-
-
15
Unit
V
V
V
nA
nA
mV
mV
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
IE=0, VCB=300V
VEB=5V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
HBN3101S6R
CYStek Product Specification





 HBN3101S6R
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
10000
Saturation Voltage vs Collector Current
100 VCE = 20V
VCE = 10V
VCE = 5V
10
1
10
Collector Current---IC (mA)
100
Saturation Voltage vs Collector Current
1000
VBE(SAT) @ IC =10IB
100
1
10
Collector Current---IC (mA)
100
Recommended Soldering Footprint
1000
VCE(SAT) @ IC = 20IB
100
10
1
VCE(SAT) @ IC = 10IB
10
Collector Current---IC (mA)
250
200
150
100
50
0
0
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature---TA(℃)
100
200
HBN3101S6R
CYStek Product Specification



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