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HBNP45C6 Dataheets PDF



Part Number HBNP45C6
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description General Purpose NPN PNP Epitaxial Planar Transistors
Datasheet HBNP45C6 DatasheetHBNP45C6 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features • Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. • Mounting possible with SOT-523 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating and halogen-free package. Equivalent Circu.

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CYStech Electronics Corp. Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features • Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. • Mounting possible with SOT-523 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating and halogen-free package. Equivalent Circuit HBNP45C6 Outline SOT-563 C1 B2 E2 E1 B1 C2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 60 -60 50 -50 7 -6 150 -150 150(total) *1 150 -55~+150 Unit V V V mA mW °C °C Note: *1 120mW per element must not be exceeded. HBNP45C6 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) • TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob • TR2 (PNP) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 200 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 600 3.5 Unit V V V μA μA V MHz pF Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 2/7 Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Min. -60 -50 -6 200 60 - Typ. -0.25 140 4 Max. -0.1 -0.1 -0.5 600 5 Unit V V V μA μA V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device HBNP45C6-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel HBNP45C6 CYStek Product Specification CYStech Electronics Corp. Characteristic curves • TR1 (NPN) Current Gain vs Collector Current 1000 HFE@VCE=6V Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 3/7 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) 100 0.1 1 10 100 1000 Collector Current --- IC(mA) Current Gain--- HFE 100 10 0.1 1 10 100 Collector Current --- IC(mA) 1000 Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 1000 Cutoff Frequency vs Collector Current VBE(SAT)@IC=10IB 100 FT@VCE=12V 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 10 0.1 1 10 100 Collector Current --- IC(mA) Capacitance Characteristics 100 fT=1MHz Capacitance---(pF) 10 Cib Cob 1 0.1 1 10 Reverse-biased Voltage---(V) 100 HBNP45C6 CYStek Product Specification CYStech Electronics Corp. • TR2 (PNP) Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=6V Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 4/7 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Current Gain--- HFE 100 100 10 0.1 1 10 100 1000 Collector Current---IC (mA) 10 0.1 1 10 100 1000 Collector Current---IC (mA) Saturation Voltage vs Collector Current 10000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 1000 Cutoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=12V 1000 100 100 0.1 1 10 100 Collector Current---IC(mA) 1000 10 0.1 1 10 Collector Current---IC (mA) 100 Capacitance Characteristics 100 Power Derating Curves 160 Power Dissipation---PD(mW) 140 120 100 Single fT=1MHz Dual Capacitance---(pF) 10 Cib 80 60 40 20 Cob 1 0.1 1 10 Reverse-biased Voltage---(V) 100 0 0 50 100 150 Ambient Temperature --- TA(℃ ) 200 HBNP45C6 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 5/7 Carrier Tape Dimension HBNP45C6 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. HBNP45C6 CYStek Product Specification CYStech Electronics Corp. SOT-563 Dimension Marking: Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Pag.


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