Document
CYStech Electronics Corp.
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/7
General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors)
HBNP45C6
Features
• Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. • Mounting possible with SOT-523 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBNP45C6
Outline
SOT-563 C1 B2 E2
E1
B1
C2
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 60 -60 50 -50 7 -6 150 -150 150(total) *1 150 -55~+150 Unit V V V mA mW °C °C
Note: *1 120mW per element must not be exceeded.
HBNP45C6 CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Characteristics (Ta=25°C)
• TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob • TR2 (PNP) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 200 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 600 3.5 Unit V V V μA μA V MHz pF
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 2/7
Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Min. -60 -50 -6 200 60 -
Typ. -0.25 140 4
Max. -0.1 -0.1 -0.5 600 5
Unit V V V μA μA V MHz pF
Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device HBNP45C6-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel
HBNP45C6
CYStek Product Specification
CYStech Electronics Corp.
Characteristic curves
• TR1 (NPN)
Current Gain vs Collector Current
1000
HFE@VCE=6V
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 3/7
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV) 100 0.1 1 10 100 1000 Collector Current --- IC(mA)
Current Gain--- HFE
100
10 0.1 1 10 100 Collector Current --- IC(mA) 1000
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 1000
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=10IB
100
FT@VCE=12V
100 0.1 1 10 100 Collector Current --- IC(mA) 1000
10 0.1 1 10 100 Collector Current --- IC(mA)
Capacitance Characteristics
100
fT=1MHz
Capacitance---(pF)
10
Cib
Cob
1 0.1 1 10 Reverse-biased Voltage---(V) 100
HBNP45C6
CYStek Product Specification
CYStech Electronics Corp.
• TR2 (PNP)
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
HFE@VCE=6V
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 4/7
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain--- HFE
100
100
10 0.1 1 10 100 1000 Collector Current---IC (mA)
10 0.1 1 10 100 1000 Collector Current---IC (mA)
Saturation Voltage vs Collector Current
10000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 1000
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=10IB
FT@VCE=12V
1000
100
100 0.1 1 10 100 Collector Current---IC(mA) 1000
10 0.1 1 10 Collector Current---IC (mA) 100
Capacitance Characteristics
100
Power Derating Curves 160 Power Dissipation---PD(mW) 140 120 100
Single
fT=1MHz
Dual
Capacitance---(pF)
10
Cib
80 60 40 20
Cob
1 0.1 1 10 Reverse-biased Voltage---(V) 100
0 0 50 100 150 Ambient Temperature --- TA(℃ ) 200
HBNP45C6
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 5/7
Carrier Tape Dimension
HBNP45C6
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 °C
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 6/7
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature
Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max.
Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max.
HBNP45C6
CYStek Product Specification
CYStech Electronics Corp.
SOT-563 Dimension
Marking:
Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Pag.