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Planar Transistors. HBNP45C6 Datasheet

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Planar Transistors. HBNP45C6 Datasheet






HBNP45C6 Transistors. Datasheet pdf. Equivalent




HBNP45C6 Transistors. Datasheet pdf. Equivalent





Part

HBNP45C6

Description

General Purpose NPN PNP Epitaxial Planar Transistors



Feature


CYStech Electronics Corp. Spec. No. : C 901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features Includes a BTC2412 chip and a BTA103 7 chip in a SOT-563 package. • Mounti ng possible with SOT-523 automatic moun ting machines. • Transistor elements are independent, elimina.
Manufacture

CYStech Electronics

Datasheet
Download HBNP45C6 Datasheet


CYStech Electronics HBNP45C6

HBNP45C6; ting interference. • Mounting cost and area can be cut in half. • Pb-free l ead plating and halogen-free package. Equivalent Circuit HBNP45C6 Outline SO T-563 C1 B2 E2 E1 B1 C2 Absolute Ma ximum Ratings (Ta=25°C) Parameter Coll ector-Base Voltage Collector-Emitter Vo ltage Emitter-Base Voltage Collector Cu rrent Power Dissipation Junction Temper ature Storage Temperatu.


CYStech Electronics HBNP45C6

re Symbol VCBO VCEO VEBO IC Pd Tj Tstg L imits TR1 (NPN) TR2 (PNP) 60 -60 50 -50 7 -6 150 -150 150(total) *1 150 -55~+1 50 Unit V V V mA mW °C °C Note: *1 1 20mW per element must not be exceeded. HBNP45C6 CYStek Product Specification h ttp://www.Datasheet4U.com CYStech Elec tronics Corp. Characteristics (Ta=25°C ) • TR1 (NPN) Symbol BVCBO BVCEO BVEB O ICBO IEBO *VCE(sat) *.


CYStech Electronics HBNP45C6

hFE fT Cob • TR2 (PNP) Symbol BVCBO BV CEO BVEBO ICBO IEBO *VCE(sat) *hFE fT C ob Min. 60 50 7 200 80 Typ. 0.2 180 2 M ax. 0.1 0.1 0.4 600 3.5 Unit V V V μA μA V MHz pF Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 2/7 Test Conditions IC=100μA IC =1mA IE=50μA VCB=60V VEB=7V IC=50mA, I B=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f =100MHz VCB=12V, f=1MHz .

Part

HBNP45C6

Description

General Purpose NPN PNP Epitaxial Planar Transistors



Feature


CYStech Electronics Corp. Spec. No. : C 901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features Includes a BTC2412 chip and a BTA103 7 chip in a SOT-563 package. • Mounti ng possible with SOT-523 automatic moun ting machines. • Transistor elements are independent, elimina.
Manufacture

CYStech Electronics

Datasheet
Download HBNP45C6 Datasheet




 HBNP45C6
CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 1/7
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP45C6
Features
Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package.
Mounting possible with SOT-523 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBNP45C6
Outline
C1
SOT-563
B2 E2
E1 B1 C2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
60 -60
50 -50
7 -6
150 -150
150(total) *1
150
-55~+150
Note: *1 120mW per element must not be exceeded.
Unit
V
V
V
mA
mW
°C
°C
HBNP45C6
CYStek Product Specification
http://www.Datasheet4U.com




 HBNP45C6
CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 2/7
Characteristics (Ta=25°C)
TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
60
50
7
-
-
-
200
80
-
Typ.
-
-
-
-
-
0.2
-
180
2
Max.
-
-
-
0.1
0.1
0.4
600
-
3.5
TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
-60
-50
-6
-
-
-
200
60
-
Typ.
-
-
-
-
-
-0.25
-
140
4
Max.
-
-
-
-0.1
-0.1
-0.5
600
-
5
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HBNP45C6-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
HBNP45C6
CYStek Product Specification




 HBNP45C6
CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 3/7
Characteristic curves
TR1 (NPN)
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
0.1
1 10 100
Collector Current --- IC(mA)
1000
Saturation Voltage vs Collector Current
1000
VBE(SAT)@IC=10IB
10
0.1
1 10 100
Collector Current --- IC(mA)
Cutoff Frequency vs Collector Current
1000
1000
100 FT@VCE=12V
100
0.1
1 10 100
Collector Current --- IC(mA)
1000
Capacitance Characteristics
100
fT=1MHz
10 Cib
1
0.1
HBNP45C6
Cob
1 10
Reverse-biased Voltage---(V)
100
10
0.1
1 10
Collector Current --- IC(mA)
100
CYStek Product Specification






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