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Planar Transistors. HBNP5213G6 Datasheet

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Planar Transistors. HBNP5213G6 Datasheet






HBNP5213G6 Transistors. Datasheet pdf. Equivalent




HBNP5213G6 Transistors. Datasheet pdf. Equivalent





Part

HBNP5213G6

Description

NPN AND PNP Dual Epitaxial Planar Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBNP5213G6 Datasheet


CYStech Electronics HBNP5213G6

HBNP5213G6; CYStech Electronics Corp. NPN AND PNP Du al Epitaxial Planar Transistors Spec. No. : C627G6 Issued Date : 2013.10.17 R evised Date : Page No. : 1/9 HBNP5213G 6 Features • High BVCEO • High curr ent • Excellent DC current gain chara cteristics • Pb-free lead plating and halogen-free package Equivalent Circu it HBNP5213G6 Outline TSOP-6 C1 E1 C2 B : Base E : Emitter .


CYStech Electronics HBNP5213G6

C : Collector B1 E2 B2 Ordering Info rmation Device HBNP5213G6-0-T1-G Packag e TSOP-6 (Pb-free lead plating and halo gen-free package) Shipping 3000 pcs / t ape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produ cts Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero fo r no rank products P.


CYStech Electronics HBNP5213G6

roduct name HBNP5213G6 CYStek Product Specification http://www.Datasheet4U.co m CYStech Electronics Corp. Absolute M aximum Ratings (Ta=25°C) Parameter Col lector-Base Voltage Collector-Emitter V oltage Emitter-Base Voltage Collector C urrent(DC) (Note 1) Peak Collector Curr ent (Note 2) Peak Base Current (Note 2) Total Power Dissipation (Note 1) Linea r Derating Factor O.



Part

HBNP5213G6

Description

NPN AND PNP Dual Epitaxial Planar Transistors

Manufacture

CYStech Electronics

Datasheet
Download HBNP5213G6 Datasheet




 HBNP5213G6
CYStech Electronics Corp.
NPN AND PNP Dual Epitaxial Planar Transistors
HBNP5213G6
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 1/9
Features
High BVCEO
High current
Excellent DC current gain characteristics
Pb-free lead plating and halogen-free package
Equivalent Circuit
HBNP5213G6
Outline
TSOP-6
C2
E1
C1
B : Base E : Emitter C : Collector
B2
E2
B1
Ordering Information
Device
HBNP5213G6-0-T1-G
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP5213G6
CYStek Product Specification
http://www.Datasheet4U.com





 HBNP5213G6
CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IBP
Pd
Tj, Tstg
Rth,ja
Limits
NPN
PNP
100 -100
80 -80
7 -7
1 -1
2 -2
200 -200
1.14
0.01
-55~+150
110
Unit
V
V
V
A
A
mA
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
NPN Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
100
-
- V IC=50μA
BVCEO
80
-
- V IC=1mA
BVEBO
7
-
- V IE=50μA
ICBO - - 100 nA VCB=100V, IE=0
IEBO - - 100 nA VEB=7V, IC=0
*VCE(SAT)
-
0.15 0.3
V IC=500mA, IB=20mA
*VCE(SAT)
-
- 0.5 V IC=1A, IB=50mA
*VBE(SAT)
-
- 1.2 V IC=1A, IB=50mA
*hFE 1
180
-
390
- VCE=10V, IC=150mA
*hFE 2
60
-
-
- VCE=10V, IC=500mA
fT
150 230
- MHz VCE=10V, IC=50mA, f=100MHz
Cob - 6 15 pF VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNP5213G6
CYStek Product Specification





 HBNP5213G6
CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 3/9
PNP Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-100
-
- V IC=-100μA
BVCEO
-80
-
- V IC=-10mA
BVEBO
-7
-
- V IE=-10μA
ICBO - - -100 nA VCB=-100V
IEBO - - -100 nA VEB=-7V
*VCE(sat)1
-
-0.16
-0.3
V IC=-500mA, IB=-50mA
*VCE(sat)2
-
- -0.6 V IC=-700mA, IB=-35mA
*VBE(sat)
-
- -1.2 V IC=-1A, IB=-50mA
*hFE1
180
-
390
- VCE=-10V, IC=-150mA
*hFE2
50
-
-
- VCE=-10V, IC=-500mA
fT
150 200
- MHz VCE=-10V, IC=-50mA, f=100MHz
Cob - 11 15 pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
HBNP5213G6
CYStek Product Specification



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