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Power MOSFET. IRLR2908PbF Datasheet

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Power MOSFET. IRLR2908PbF Datasheet






IRLR2908PbF MOSFET. Datasheet pdf. Equivalent




IRLR2908PbF MOSFET. Datasheet pdf. Equivalent





Part

IRLR2908PbF

Description

Power MOSFET



Feature


PD - 95552A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET® Power MOSFET D IRLR2908PbF IRLU2908PbF VDSS = 80V RDS (on) = 28m Ω Advanced Process Techno logy Ultra Low On-Resistance Dynamic dv /dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Al lowed up to Tjmax Lead-Free G S ID = 30A Description Specifically designed for Automotive applica.
Manufacture

International Rectifier

Datasheet
Download IRLR2908PbF Datasheet


International Rectifier IRLR2908PbF

IRLR2908PbF; tions, this HEXFET ® Power MOSFET utili zes the latest processing techniques to achieve extremely low on-resistance pe r silicon area. Additional features of this HEXFET power MOSFET are a 175°C j unction operating temperature, low RθJ C, fast switching speed and improved re petitive avalanche rating. These featur es combine to make this design an extre mely efficient and re.


International Rectifier IRLR2908PbF

liable device for use in Automotive appl ications and a wide variety of other ap plications. The D-Pak is designed for s urface mounting using vapor phase, infr ared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications . Power dissipation levels up to 1.5 wa tts are possible in typical surface mou nt applications. .


International Rectifier IRLR2908PbF

D-Pak IRLR2908 I-Pak IRLU2908 Absolute Maximum Ratings Parameter ID @ TC = 25 °C ID @ TC = 100°C ID @ TC = 25°C ID M PD @TC = 25°C VGS EAS EAS (tested) I AR EAR dv/dt TJ TSTG Continuous Drain C urrent, VGS @ 10V (Silicon Limited) Con tinuous Drain Current, VGS @ 10V (See F ig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Curr ent Max. 39 28 30 150.

Part

IRLR2908PbF

Description

Power MOSFET



Feature


PD - 95552A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET® Power MOSFET D IRLR2908PbF IRLU2908PbF VDSS = 80V RDS (on) = 28m Ω Advanced Process Techno logy Ultra Low On-Resistance Dynamic dv /dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Al lowed up to Tjmax Lead-Free G S ID = 30A Description Specifically designed for Automotive applica.
Manufacture

International Rectifier

Datasheet
Download IRLR2908PbF Datasheet




 IRLR2908PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This HEXFET ® Power MOSFET utilizes the latest processing techniques
to achieve extremely low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction operating temperature,
low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to 1.5
watts are possible in typical surface mount applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Maximum Power Dissipation
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
™Avalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
PD - 95552B
IRLR2908PbF
IRLU2908PbF
HEXFET® Power MOSFET
D
VDSS = 80V
RDS(on) = 28m
S ID = 30A
D-Pak
I-Pak
IRLR2908PbF IRLU2908PbF
Max.
39
28
30
150
120
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.3
40
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/01/10




 IRLR2908PbF
IRLR/U2908PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80 ––– –––
––– 0.085 –––
––– 22.5 28
––– 25 30
1.0 ––– 2.5
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
fmVGS = 10V, ID = 23A
fVGS = 4.5V, ID = 20A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
35 ––– ––– S VDS = 25V, ID = 23A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 80V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Qg Total Gate Charge
––– 22 33 nC ID = 23A
Qgs Gate-to-Source Charge
––– 6.0 9.1
VDS = 64V
Qgd
Gate-to-Drain ("Miller") Charge
––– 11 17
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 12 ––– ns VDD = 40V
tr Rise Time
––– 95 –––
ID = 23A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 36 –––
––– 55 –––
fRG = 8.3
VGS = 4.5V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1890 –––
––– 260 –––
––– 35 –––
––– 1920 –––
––– 170 –––
––– 310 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 39
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 150
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 23A, VGS = 0V
––– 75 110
––– 210 310
fns TJ = 25°C, IF = 23A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through ˆ are on page 11
HEXFET® is a registered trademark of International Rectifier.
2
www.irf.com




 IRLR2908PbF
IRLR/U2908PbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
1
2.5V
0.1
0.01
0.01
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
10
2.5V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
1
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
60
TJ = 25°C
50
40
30 TJ = 175°C
20
10
0
0
VDS = 10V
20µs PULSE WIDTH
10 20 30 40 50 60
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3






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