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N-Channel MOSFET. IXTP3N60P Datasheet

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N-Channel MOSFET. IXTP3N60P Datasheet






IXTP3N60P MOSFET. Datasheet pdf. Equivalent




IXTP3N60P MOSFET. Datasheet pdf. Equivalent





Part

IXTP3N60P

Description

N-Channel MOSFET

Manufacture

IXYS Corporation

Datasheet
Download IXTP3N60P Datasheet


IXYS Corporation IXTP3N60P

IXTP3N60P; PolarTM Power MOSFET N-Channel Enhanceme nt Mode Avalanche Rated IXTY3N60P IXTA 3N60P IXTP3N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Ts tg TL TSOLD FC Md Weight Test Conditio ns TJ = 25C to 150C TJ = 25C t o 150C, RGS = 1M Continuous Trans ient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25 C, Pulse Width Limited by TJM TC .


IXYS Corporation IXTP3N60P

= 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 100 5 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maxim um Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 1 0s 260 °C Mounting Force (TO-263) M ounting Torque (TO-220) 10..65 / 2.2.. 14.6 1.13 / 10 N/lb Nm/lb.in TO-252 T O-263 TO-220 0.35 g 2.50 g 3.00 g.


IXYS Corporation IXTP3N60P

Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VG S = 0V, ID = 250μA VGS(th) VDS = VGS , ID = 50μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 1 25C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values M in. Typ. Max. 600 V 3.0 5.5 V   100 nA 5 A 50 A 2.9  VDSS = ID25 =  RDS(o.



Part

IXTP3N60P

Description

N-Channel MOSFET

Manufacture

IXYS Corporation

Datasheet
Download IXTP3N60P Datasheet




 IXTP3N60P
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY3N60P
IXTA3N60P
IXTP3N60P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
600
V
600
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
3
6
3
100
5
70
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-252
TO-263
TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
100 nA
5 A
50 A
2.9
VDSS =
ID25 =
RDS(on)
600V
3A
2.9
TO-252 (IXTY)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge
Circiuts
in
Lasers,
Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS99449F(6/17)





 IXTP3N60P
IXTY3N60P
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30(External)
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max
2.2
3.4
S
411
pF
44
pF
6.4
pF
9.8
nC
3.4
nC
3.5
nC
25
ns
25
ns
58
ns
22
ns
1.8 C/W
0.50
C/W
IXTA3N60P
IXTP3N60P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 3A, -di/dt = 100A/μs, VR = 100V
Characteristic Values
Min. Typ. Max
3A
9A
1.5 V
500
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537





 IXTP3N60P
Fig. 1. Output Characteristics @ TJ = 25oC
3.0
VGS = 10V
8V
2.5
7V
2.0
1.5
1.0
6V
0.5
0.0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
3.0
VGS = 10V
7V
2.5
2.0
6V
1.5
1.0
0.5
5V
0.0
0
2
4
6
8
10 12 14 16 18 20
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs.
Drain Current
3.0
VGS = 10V
2.5
TJ = 125oC
2.0
TJ = 25oC
1.5
1.0
0.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
ID - Amperes
IXTY3N60P IXTA3N60P
IXTP3N60P
Fig. 2. Extended Output Characteristics @ TJ = 25oC
6
VGS = 10V
8V
5
4
7V
3
2
1
6V
0
0
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.
Junction Temperature
3.2
VGS = 10V
2.8
2.4
I D = 3A
2.0
I D = 1.5A
1.6
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved



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