IXTA52P10P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P TO-263 AA (IXTA) TO-220AB (IXTP) D G S D (Tab) GD S D (Tab) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings -100 V -100 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 52 A -130 A - 52 A 1.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 -55 ... +150 150 -55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Torque (TO-3P,TO-220,TO-247) 1.13/10 Nm/lb.in. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V ±100 nA -10 μA -150 μA 50 mΩ VDSS = ID25 = ≤ RDS(on) - 100V - 52A 50mΩ TO-3P (IXTQ) G D S Tab TO-247 (IXTH) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Fast Intrinsic Diode z Dynamic dv/dt Rated z Avalanche Rated z Rugged PolarPTM Process z Low QG and Rds(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advan...