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Passivated Rectifiers. S1PJ Datasheet

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Passivated Rectifiers. S1PJ Datasheet






S1PJ Rectifiers. Datasheet pdf. Equivalent




S1PJ Rectifiers. Datasheet pdf. Equivalent





Part

S1PJ

Description

Glass Passivated Rectifiers

Manufacture

Vishay Siliconix

Datasheet
Download S1PJ Datasheet


Vishay Siliconix S1PJ

S1PJ; www.vishay.com S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM Vishay General Semiconductor High Current Density Surface-Mount Gl ass Passivated Rectifiers eSMP® Serie s SMP (DO-220AA) Cathode Anode LINK S TO ADDITIONAL RESOURCES 3D 3D 3D Mode ls PRIMARY CHARACTERISTICS IF(AV) VRR M 1.0 A 100 V, 200 V, 400 V, 600 V, 80 0 V, 1000 V IR VF TJ max. Package 1 A 0.95 V 150 °C SMP.


Vishay Siliconix S1PJ

(DO-220AA) Circuit configuration Sing le FEATURES • Very low profile - ty pical height of 1.0 mm Available • Ideal for automated placement • Glas s passivated pellet chip junction • Low forward voltage drop • Low therm al resistance • Meets MSL level 1, p er J-STD-020, LF maximum peak of 260 ° C • AEC-Q101 qualified • Material categorization: for definitions of.


Vishay Siliconix S1PJ

compliance please see www.vishay.com/do c?99912 TYPICAL APPLICATIONS General p urpose, polarity protection, and rail-t o-rail protection in both consumer and automotive applications. MECHANICAL DA TA Case: SMP (DO-220AA) Molding compoun d meets UL 94 V-0 flammability rating B ase P/N-M3 - halogen-free, RoHS-complia nt, and commercial grade Base P/NHM3 - halogen-free, RoHS.



Part

S1PJ

Description

Glass Passivated Rectifiers

Manufacture

Vishay Siliconix

Datasheet
Download S1PJ Datasheet




 S1PJ
www.vishay.com
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
Vishay General Semiconductor
High Current Density Surface-Mount
Glass Passivated Rectifiers
eSMP® Series
SMP (DO-220AA)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
1.0 A
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IR
VF
TJ max.
Package
1 μA
0.95 V
150 °C
SMP (DO-220AA)
Circuit configuration
Single
FEATURES
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MECHANICAL DATA
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1PB
Device marking code
SB
Max. repetitive peak reverse voltage
VRRM
100
Max. RMS voltage
Max. DC blocking voltage
Average forward current
VRMS
VDC
IF(AV)
70
100
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
S1PD
SD
200
140
200
S1PG S1PJ
SG SJ
400 600
280 420
400 600
1.0
30
-55 to +150
S1PK
SK
800
560
800
S1PM
SM
1000
700
1000
UNIT
V
V
V
A
A
°C
Revision: 15-Apr-2020
1 Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 S1PJ
www.vishay.com
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL S1PB S1PD S1PG S1PJ
Max. instantaneous
forward voltage
Max. reverse current
Typical reverse recovery time
Typical junction capacitance time
IF = 1.0 A TJ = 25 °C
IF = 1.0 A TJ = 125 °C
Rated VR
TJ = 25 °C
TJ = 125 °C
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
4.0 V, 1 MHz
VF (1)
IR (2)
trr
CJ
1.1
0.95
1.0
50
1.8
6.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
S1PK S1PM UNIT
V
1.0 μA
100 μA
μs
pF
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
RθJA (1)
105
Typical thermal resistance
RθJL (1)
15 °C/W
Note
RθJC (1)
20
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. RθJL is
measured at the terminal of cathode band. RθJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
S1PJ-M3/84A
0.024
84A
S1PJ-M3/85A
S1PJHM3/84A (1)
S1PJHM3/85A (1)
0.024
0.024
0.024
85A
84A
85A
Note
(1) Automotive grade
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
TL Measured
at the Cathode Band Terminal
0.2
0
80 90 100 110 120 130 140 150
Lead Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
1.2
D = 0.5 D = 0.8
1.0 D = 0.3
D = 0.2
0.8 D = 0.1
D = 1.0
0.6
T
0.4
0.2 D = tp/T tp
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Forward Current
Fig. 2 - Forward Power Loss Characteristics
Revision: 15-Apr-2020
2 Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 S1PJ
www.vishay.com
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
Vishay General Semiconductor
30
25
20
15
10
5
0
1 10 100
Number of Cycles at 50 Hz
Fig. 3 - Max. Non-Repetitive Peak Forward Surge Current
Axis Title
100 10000
10
TJ= 150 °C
1000
1
TJ= -40 °C
0.1 TJ= 25 °C
100
TJ= 125 °C
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
10
2.0
Fig. 4 - Typical Instantaneous Forward Characteristics
Axis Title
100
TJ = 150 °C
10 TJ = 125 °C
1
10000
1000
0.1 TJ = 25 °C
100
0.01
TJ = -40 °C
0.001
10
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
100
10
1
0.1 1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
1000
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
Revision: 15-Apr-2020
3 Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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