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Power MOSFET. STB24NM60N Datasheet

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Power MOSFET. STB24NM60N Datasheet






STB24NM60N MOSFET. Datasheet pdf. Equivalent




STB24NM60N MOSFET. Datasheet pdf. Equivalent





Part

STB24NM60N

Description

Power MOSFET



Feature


STB24NM60N N-channel 600 V, 0.168 Ω , 1 7 A MDmesh™ II Power MOSFET D²PAK Fe atures Order codes STB24NM60N ■ ■ VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche teste d Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK Application Switching applications De scription These N-channel 600 V Power M OSFET devices are made using t.
Manufacture

STMicroelectronics

Datasheet
Download STB24NM60N Datasheet


STMicroelectronics STB24NM60N

STB24NM60N; he second generation of MDmesh™ techno logy. This revolutionary Power MOSFET a ssociates a new vertical structure to t he company’s strip layout to yield on e of the world’s lowest on-resistance and gate charge. It is therefore suita ble for the most demanding high efficie ncy converter. Figure 1. Internal schem atic diagram $ ' 3 !- V Table 1. Device sum.


STMicroelectronics STB24NM60N

mary Marking 24NM60N Package D²PAK Pack aging Tape and reel Order codes STB24N M60N February 2011 Doc ID 010008 Rev 1 1/15 www.st.com 15 http://www.Datas heet4U.com Contents STB24NM60N Conte nts 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . ..


STMicroelectronics STB24NM60N

. . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (cu rves) ............................. 6 3 4 5 6 Test circuits ............... ............................... 8 Pack age mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . .

Part

STB24NM60N

Description

Power MOSFET



Feature


STB24NM60N N-channel 600 V, 0.168 Ω , 1 7 A MDmesh™ II Power MOSFET D²PAK Fe atures Order codes STB24NM60N ■ ■ VDSS (@Tjmax) 650 V RDS(on) max. < 0.19 Ω ID 17 A 100% avalanche teste d Low input capacitance and gate charge Low gate input resistance 3 1 D²PAK Application Switching applications De scription These N-channel 600 V Power M OSFET devices are made using t.
Manufacture

STMicroelectronics

Datasheet
Download STB24NM60N Datasheet




 STB24NM60N
STB24NM60N
N-channel 600 V, 0.168 typ., 17 A MDmesh™ II Power MOSFET
in a D²PAK package
Datasheet production data
Features
TAB
3
1
D2PAK
Order code VDS @Tjmax RDS(on) max. ID
STB24NM60N 650 V
0.19
17 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
' RU7$%
* 
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6 
$0Y
Order code
STB24NM60N
Table 1. Device summary
Marking
Packages
24NM60N
D2PAK
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID018484 Rev 2
1/14
www.st.com




 STB24NM60N
Contents
Contents
STB24NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID018484 Rev 2




 STB24NM60N
STB24NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VGS
ID
ID
IDM (1)
PTOT
dv/dt(2)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at
TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
± 30
17
11
68
125
15
TJ Operating junction temperature
Tstg Storage temperature
-55 to 150
1. Pulse width limited by safe operating area.
2. ISD 17 A, di/dt 400 A/µs, peak VDS V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 oz Cu
Value
1
30
Table 4. Avalanche characteristics
Symbol
Parameter
Value
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
6
300
Unit
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID018484 Rev 2
3/14
14






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