Power MOSFET
STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, I...
Description
STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
Features
Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID
3
3 2 1
1 2
7A 7A 7 A(1) 7A
IPAK
TO-220
1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■
3 1
3 1 2
The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.
DPAK
TO-220FP
Internal schematic diagram
Application
■
Switching applications
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary
Marking 8NM60ND 8NM60ND 8NM60ND 8NM60ND Package DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube Tube Tube Order codes STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND
February 2009
Rev 1
1/17
www.st.com 17
http://www.Datasheet4U.com
Contents
STx8NM60ND
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteris...
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