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Power MOSFET. STP8NM60ND Datasheet

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Power MOSFET. STP8NM60ND Datasheet






STP8NM60ND MOSFET. Datasheet pdf. Equivalent




STP8NM60ND MOSFET. Datasheet pdf. Equivalent





Part

STP8NM60ND

Description

Power MOSFET

Manufacture

STMicroelectronics

Datasheet
Download STP8NM60ND Datasheet


STMicroelectronics STP8NM60ND

STP8NM60ND; STD8NM60ND, STF8NM60ND STP8NM60ND, STU8N M60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-22 0FP, IPAK, DPAK Features Type STD8NM60N D STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(o n) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID 3 3 2 1 1 2 7A 7A 7 A( 1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■.


STMicroelectronics STP8NM60ND

■ ■ ■ ■ 3 1 3 1 2 The worldwi de best RDS(on)* area amongst the fast recovery diode devices 100% avalanche t ested Low input capacitance and gate ch arge Low gate input resistance Extremel y high dv/dt and avalanche capabilities Figure 1. DPAK TO-220FP Internal sc hematic diagram Application ■ Switc hing applications Description The FDme sh™ II series belongs to the.


STMicroelectronics STP8NM60ND

second generation of MDmesh™ technolo gy. This revolutionary Power MOSFET ass ociates a new vertical structure to the company’s strip layout and associate s all advantages of reduced onresistanc e and fast switching with an intrinsic fastrecovery body diode.Strongly recomm ended for bridge topologies, in ZVS pha se-shift converters. Table 1. Device su mmary Marking 8NM60ND .



Part

STP8NM60ND

Description

Power MOSFET

Manufacture

STMicroelectronics

Datasheet
Download STP8NM60ND Datasheet




 STP8NM60ND
STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70
< 0.70
< 0.70
< 0.70
7A
7A
7 A(1)
7A
1. Limited only by maximum temperature allowed
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 1
1/17
www.st.com
17
http://www.Datasheet4U.com





 STP8NM60ND
Contents
Contents
STx8NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17





 STP8NM60ND
STx8NM60ND
1 Electrical
ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
TO-220 DPAK
IPAK
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
Drain current (continuous) at
ID TC = 25 °C
ID
IDM (2)
Drain current (continuous) at
TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS)
VISO from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
dv/dt (3) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 7 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
600
± 30
77
4.4
28
70
40
-55 to 150
150
Value
TO-220 DPAK
IPAK
(1)
4.4 (1)
28 (1)
25
2500
TO-220FP
V
V
A
A
A
W
V
V/ns
°C
°C
Unit
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Rthj-pcb Thermal resistance junction-pcb
Tl
Maximum lead temperature for
soldering purpose
1.79
62.5 100
50
300
5 °C/W
62.5 °C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
2.5
200
Unit
A
mJ
3/17



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