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Power Transistor. D850 Datasheet

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Power Transistor. D850 Datasheet






D850 Transistor. Datasheet pdf. Equivalent




D850 Transistor. Datasheet pdf. Equivalent





Part

D850

Description

Silicon Diffused Power Transistor

Manufacture

SavantIC

Datasheet
Download D850 Datasheet


SavantIC D850

D850; SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD850 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ,hi gh speed APPLICATIONS ·Line-operated h orizontal deflection output application s PINNING(see fig.2) PIN DE 1 2 3 Base Emitter Collector Fig.1 simplified o ut line ( TO-3) a nd s ymbol SCRIPTION Ab solute maximum rating.


SavantIC D850

s(Ta= ) SYMBOL P VCBO VCEO VEBO IC ICM C PT Tj Tstg ARAMETER Collector-base vol tage Collector-emitter voltage Emitter- base voltage Collector current ollector current-peak Total power dissipation J unction temperature Storage temperature TC=90 25 150 -65~150 CONDITIONS Open e mitter Open base Open collector VALUE 1 500 700 5 3 5 UNIT V V V A A W http:// www.Datasheet4U.co.


SavantIC D850

m SavantIC Semiconductor Product Speci fication Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u nless otherwis e specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakd own votage ollector-emitter saturation voltage ase-emitter saturation voltage CONDITIONS IC=0.1A; IB=0 600 IE=10mA; I C=0 IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A V CB=750V;IE=0 ICBO .



Part

D850

Description

Silicon Diffused Power Transistor

Manufacture

SavantIC

Datasheet
Download D850 Datasheet




 D850
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD850
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High voltage ,high speed
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN DE
SCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified o utline ( TO-3) a nd s ymbol
Absolute maximum ratings(Ta= )
SYMBOL P
ARAMETER
VCBO
VCEO
VEBO
IC
ICM C
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ollector current-peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=90 25
VALUE
1500
700
5
3
5
150
-65~150
UNIT
V
V
V
A
A
W
http://www.Datasheet4U.com





 D850
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD850
CHARACTERISTICS
Tj=25 u nless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600
V(BR)EBO Emitter-base breakdown votage
IE=10mA; IC=0
VCEsat C ollector-emitter saturation voltage IC=2.5 A;IB=0.8A
VBEsat B ase-emitter saturation voltage
IC=2.5 A;IB=0.8A
ICBO Collector cut-off current
VCB=750V;IE=0
VCB=1500V;IE=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V 8
hFE-2
DC current gain
IC=2.5A ; VCE=10V 4
tf Fall time
ts Storage time
IC=2.5A;IBend=0.8A;LB=5µH
MIN TYP. MAX UNIT
V
5V
4.0 V
1.5 V
50 µA
1.0 m A
15
1.0 µs
13 µs
2





 D850
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD850
Fig.2 Outline dimensions
3



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