D850

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DE 1 2 3 Base Emitter Collector Fig.1 simplified o utline ( TO-3) a nd s ymbol SCRIPTION Absolute maximum ratings(Ta= ) SYMBOL P VCBO VCEO VEBO IC ICM C PT Tj Tstg ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ollector current-peak Total power dissipation Junction temperature Storage temperature TC=90 25 150 -65~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 3 5 UNIT V V V A A W http://www.Datasheet4U.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u nless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage ollector-emitter saturation voltage ase-emitter saturation voltage CONDITIONS IC=0.1A; IB=0 600 IE=10mA; IC=0 IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=2.5A;IBend=0.8A;LB=5µH Storage time 13 IC=0.5A ; VCE=5V 8 IC=2.5A ; VCE=10V 4 5 MIN TYP. www.datasheet4u.com 2SD850 SYMBOL VCEO(SUS) V(BR)EBO VCEsat C VBEsat B MAX UNIT V V 4.0 1.5 50 1.0 m V V µA A 15 1.0 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Powe...