D12S60

SDT12S60 Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 30 12 PG-TO220-2-2. V nC A Type SDT12S60 Package PG-TO220-2-2. Ordering Code Q67040-S4470 Marking D12S60 Pin 1 C Pin 2 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.3 Page 1 2008-06-03 http://www.Datasheet4U.com SDT12S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 1.7 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=12A, Tj=25°C IF=12A, Tj=150°C Symbol min. VF IR - Values ty...