DatasheetsPDF.com

Schottky Diode. D12S60 Datasheet

DatasheetsPDF.com

Schottky Diode. D12S60 Datasheet






D12S60 Diode. Datasheet pdf. Equivalent




D12S60 Diode. Datasheet pdf. Equivalent





Part

D12S60

Description

SiC Schottky Diode

Manufacture

Infineon

Datasheet
Download D12S60 Datasheet


Infineon D12S60

D12S60; SDT12S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide • Switching behavio r benchmark • No reverse recovery • No temperature influence on the switch ing behavior • No forward recovery t hinQ! SiC Schottky Diode Product Sum mary VRRM Qc IF 600 30 12 PG-TO220-2-2. V nC A Type SDT12S60 Package.


Infineon D12S60

PG-TO220-2-2. Ordering Code Q67040-S44 70 Marking D12S60 Pin 1 C Pin 2 A M aximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuou s forward current, TC=100°C RMS forwar d current, f=50Hz TC=25°C, tp=10ms Sy mbol IF IFRMS Value 12 17 36 49 120 6. 48 600 600 88.2 -55... +175 Unit A Su rge non repetitive forward current, sin e halfwave IFSM Repet.


Infineon D12S60

itive peak forward current Tj=150°C, TC =100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive pe ak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitiv e peak reverse voltage Surge peak rever se voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.3 Page 1 2008-06-03 http://www.Datasheet4U.com .



Part

D12S60

Description

SiC Schottky Diode

Manufacture

Infineon

Datasheet
Download D12S60 Datasheet




 D12S60
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT12S60
thinQ!SiC Schottky Diode
Product Summary
VRRM
600
Qc 30
IF 12
V
nC
A
PG-TO220-2-2.
Type
SDT12S60
Package
Ordering Code
PG-TO220-2-2. Q67040-S4470
Marking Pin 1 Pin 2
D12S60 C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.3
Page 1
2008-06-03
http://www.Datasheet4U.com





 D12S60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SDT12S60
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- - 1.7 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=12A, Tj=25°C
IF=12A, Tj=150°C
VF
- 1.5 1.7
- 1.7 2.1
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
IR
- 40 400
- 100 2000
Unit
V
µA
Rev. 2.3
Page 2
2008-06-03





 D12S60
SDT12S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C
Total capacitance
Qc - 30 -
trr - n.a. -
C
VR=1V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
VR=600V, TC=25°C, f=1MHz
- 450 -
- 45 -
- 43 -
Unit
nC
ns
pF
Rev. 2.3
Page 3
2008-06-03



Recommended third-party D12S60 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)