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NPN Transistor. C4808 Datasheet

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NPN Transistor. C4808 Datasheet






C4808 Transistor. Datasheet pdf. Equivalent




C4808 Transistor. Datasheet pdf. Equivalent





Part

C4808

Description

Silicon NPN Transistor



Feature


Transistor 2SC4808 Silicon NPN epitaxia l planer type For UHF band low-noise am plification Unit: mm 1.6±0.15 1.6±0. 1 q q q 1.0±0.1 0.5 q Low noise f igure NF. High gain. High transition fr equency fT. SSMini type package, allowi ng downsizing of the equipment and auto matic insertion through the tape packin g. 1 0.5 3 2 0.45±0.1 0.3 0.75± 0.15 Parameter Collect.
Manufacture

Panasonic Semiconductor

Datasheet
Download C4808 Datasheet


Panasonic Semiconductor C4808

C4808; or to base voltage Collector to emitter voltage Emitter to base voltage Collect or current Collector power dissipation Junction temperature Storage temperatur e Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 2 80 125 125 –55 ~ +12 5 Unit V V V mA mW ˚C ˚C 1:Base 2:Em itter 3:Collector EIAJ:SC–75 SS–Mi ni Type Package Marking symbol : 3M s Electrical Characteristic.


Panasonic Semiconductor C4808

s Parameter Collector cutoff current Emi tter cutoff current Collector to base v oltage Collector to emitter voltage For ward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Sy mbol ICBO IEBO VCBO VCEO hFE fT Cob | S 21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = .


Panasonic Semiconductor C4808

0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 VCE = 8V, IC = 20mA* VCE = 8V, IC = 15 mA, f = 800MHz VCB = 10V, IE = 0, f = 1 MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 7mA, f = 800MHz * min typ 0 to 0.1 s Absolute Maximum Ratings (Ta=25 ˚C) 0.2±0.1 max 1 1 0.15–0.05 + 0.1 0.2–0.05 s Features 0.4 0.8± 0.1 0.4 +0.1 Unit µA µA V.

Part

C4808

Description

Silicon NPN Transistor



Feature


Transistor 2SC4808 Silicon NPN epitaxia l planer type For UHF band low-noise am plification Unit: mm 1.6±0.15 1.6±0. 1 q q q 1.0±0.1 0.5 q Low noise f igure NF. High gain. High transition fr equency fT. SSMini type package, allowi ng downsizing of the equipment and auto matic insertion through the tape packin g. 1 0.5 3 2 0.45±0.1 0.3 0.75± 0.15 Parameter Collect.
Manufacture

Panasonic Semiconductor

Datasheet
Download C4808 Datasheet




 C4808
Transistor
2SC4808
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q Low noise figure NF.
q High gain.
q High transition frequency fT.
q SSMini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
2
80
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 3M
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
ICBO
IEBO
VCBO
VCEO
hFE
VCB = 10V, IE = 0
VEB = 2V, IC = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
VCE = 8V, IC = 20mA*
1 µA
1 µA
15 V
10 V
50 150 300
Transition frequency
Collector output capacitance
Foward transfer gain
fT
Cob
| S21e |2
VCE = 8V, IC = 15mA, f = 800MHz
5
6
GHz
VCB = 10V, IE = 0, f = 1MHz
0.7 1.2 pF
VCE = 8V, IC = 15mA, f = 800MHz 11 14
dB
Maximum unilateral power gain
Noise figure
GUM
NF
VCE = 8V, IC = 15mA, f = 800MHz
VCE = 8V, IC = 7mA, f = 800MHz
15 dB
2 dB
* Pulse measurement
1
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 C4808
Transistor
PC — Ta
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1 Ta=75˚C
25˚C
–25˚C
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
2.4
IE=0
f=1MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
24
Ta=25˚C
20 IB=200µA
180µA
160µA
16 140µA
120µA
12
100µA
8 80µA
60µA
4 40µA
20µA
0
0 26 4
8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
600
VCE=8V
500
400
Ta=75˚C
300
25˚C
200
–25˚C
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
GUM — IC
24
VCE=8V
f=800MHz
Ta=25˚C
20
16
12
8
4
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2SC4808
IC — VBE
120
VCE=8V
100
25˚C
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IC
12
VCE=8V
f=800MHz
Ta=25˚C
10
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NF — IC
12
VCE=8V
(Rg=50)
10 f=800MHz
Ta=25˚C
8
6
4
2
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2










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