DatasheetsPDF.com

NPN Transistor. C1227 Datasheet

DatasheetsPDF.com

NPN Transistor. C1227 Datasheet






C1227 Transistor. Datasheet pdf. Equivalent




C1227 Transistor. Datasheet pdf. Equivalent





Part

C1227

Description

Silicon NPN Transistor

Manufacture

SavantIC

Datasheet
Download C1227 Datasheet


SavantIC C1227

C1227; SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors ww w.DataSheet4U.com 2SC1227 DESCRIPTION ·With TO-3 package ·High power dissi pation APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig. 1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO.


SavantIC C1227

IC IB PT Tj Tstg PARAMETER Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Ba se current Total power dissipation Junc tion temperature Storage temperature TC =25? Open emitter Open base Open collec tor CONDITIONS VALUE 300 200 7 10 3 100 150 -55~150 UNIT V V V A A W ? ? THER MAL CHARACTERISTICS SYMBOL Rth j-c PARA METER Thermal resi.


SavantIC C1227

stance from junction to case VALUE 1.25 UNIT ? /W http://www.Datasheet4U.com SavantIC Semiconductor Product Specifi cation Silicon NPN Power Transistors w ww.DataSheet4U.com CHARACTERISTICS Tj=2 5? unless otherwise specified SYMBOL V( BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitt er breakdown voltage Collector-base bre akdown voltage Emi.



Part

C1227

Description

Silicon NPN Transistor

Manufacture

SavantIC

Datasheet
Download C1227 Datasheet




 C1227
SavantIC Semiconductor
Swwiwli.DcaotanSheNet4PU.NcomPower Transistors
Product Specification
2SC1227
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25?
VALUE
300
200
7
10
3
100
150
-55~150
UNIT
V
V
V
A
A
W
?
?
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
1.25
UNIT
? /W
http://www.Datasheet4U.com





 C1227
SavantIC Semiconductor
Swwiwli.DcaotanSheNet4PU.NcomPower Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0
V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO Collector cut-off current
VCB=300V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=5A ; VCE=5V
Product Specification
2SC1227
MIN TYP. MAX UNIT
200 V
300 V
7V
1.0 V
1.5 V
20 µA
20 µA
50
2





 C1227
SavantIC Semiconductor
Swwiwli.DcaotanSheNet4PU.NcomPower Transistors
PACKAGE OUTLINE
Product Specification
2SC1227
Fig.2 Outline dimensions
3



Recommended third-party C1227 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)