Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1227
DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
MAXIMUN RATINGS
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 300 200 7 10 3 100 150 -55~150 UNIT V V V A A W ? ?
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT ? /W
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ; IB=0 IC=0.1mA ; IE=0 IE=0.1mA ; IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=300V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 50 MIN 200 300 7
2SC1227
TYP.
MAX
UNIT V V V
1.0 1.5 20 20
V V µA µA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
PACKAGE OUTLINE
2SC1227
Fig.2 Outline dimensions
3
.