FIR2N60FG
Advanced N-Ch Power MOSFET
PIN Connection
TO-220F
Switchng Regulator Application Features
• High Voltage: B...
FIR2N60FG
Advanced N-Ch Power MOSFET
PIN Connection
TO-220F
Switchng
Regulator Application Features
High Voltage: BVDSS=600V(Min.) Low Crss : Crss=3.4F(Typ.) Low gate charge : Qg= 7.0nC(Typ.) Low RDS(on) :RDS(on)=7.0Ω(Max.)
G D S
D
G
S
Marking Diagram
Y A
YAWW
= Year = Assembly Location = Work Week
WW
FIR2N60F
FIR2N60F = Specific Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic Symbol
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ①
*
Advanced N-Ch Power MOSFET
Rating
VDSS 600 VGSS ID (Tc=25℃) (Tc=100℃) IDM 6.0 PD19.1 IAS 2.0 EAS 88 IAR 2.0 EAR 8 TJ Tstg 150 -55~150 ±20 1.5 1
Unit
V V A A A W A mJ A mJ °C
Characteristic Symbol
Thermal resistance Junction-case R Junction-ambient R
th(J-C) th(J-A)
Typ.
-
Max.
5.6 100
Unit
°C/W
http://www.Datasheet4U.com
@ 2010 Copyright By American First Semiconductor
Page 1/7
FIR2N60FG
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic Symbol
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on d elay t ime Rise t...