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Power MOSFET. FIR2N60FG Datasheet

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Power MOSFET. FIR2N60FG Datasheet






FIR2N60FG MOSFET. Datasheet pdf. Equivalent




FIR2N60FG MOSFET. Datasheet pdf. Equivalent





Part

FIR2N60FG

Description

Advanced N-Ch Power MOSFET



Feature


FIR2N60FG Advanced N-Ch Power MOSFET PI N Connection TO-220F Switchng Regulat or Application Features • High Voltag e: BVDSS=600V(Min.) • Low Crss : Crss =3.4F(Typ.) • Low gate charge : Qg= 7 .0nC(Typ.) • Low RDS(on) :RDS(on)=7.0 Ω(Max.) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = S pecific Device Code Absolu.
Manufacture

First Semiconductor

Datasheet
Download FIR2N60FG Datasheet


First Semiconductor FIR2N60FG

FIR2N60FG; te maximum ratings (TC=25°C unless othe rwise noted) Characteristic Symbol Drai n-source voltage Gate-source voltage Dr ain current (DC) * Drain current (Pulse d) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetit ive avalanche energy Junction temperatu re Storage temperature range * Limited by maximum junction.


First Semiconductor FIR2N60FG

temperature ② ② ① ① * Advanced N-Ch Power MOSFET Rating VDSS 600 VGS S ID (Tc=25℃) (Tc=100℃) IDM 6.0 PD1 9.1 IAS 2.0 EAS 88 IAR 2.0 EAR 8 TJ Tst g 150 -55~150 ±20 1.5 1 Unit V V A A A W A mJ A mJ °C Characteristic Symbo l Thermal resistance Junction-case R Ju nction-ambient R th(J-C) th(J-A) Typ. - Max. 5.6 100 Unit °C/W http://www .Datasheet4U.com @ 2010 Copyrigh.


First Semiconductor FIR2N60FG

t By American First Semiconductor Page 1/7 FIR2N60FG Electrical Characteristi cs (TC=25°C unless otherwise noted) Ch aracteristic Symbol Drain-source breakd own voltage Gate threshold voltage Drai n-source cut-off current Gate leakage c urrent Drain-source on-resistance Forwa rd transfer conductance Input capacitan ce Output capacitance Reverse transfer capacitance Turn-on.

Part

FIR2N60FG

Description

Advanced N-Ch Power MOSFET



Feature


FIR2N60FG Advanced N-Ch Power MOSFET PI N Connection TO-220F Switchng Regulat or Application Features • High Voltag e: BVDSS=600V(Min.) • Low Crss : Crss =3.4F(Typ.) • Low gate charge : Qg= 7 .0nC(Typ.) • Low RDS(on) :RDS(on)=7.0 Ω(Max.) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = S pecific Device Code Absolu.
Manufacture

First Semiconductor

Datasheet
Download FIR2N60FG Datasheet




 FIR2N60FG
Advanced N-Ch Power MOSFET
Switchng Regulator Application
Features
High Voltage: BVDSS=600V(Min.)
Low Crss : Crss=3.4F(Typ.)
Low gate charge : Qg= 7.0nC(Typ.)
Low RDS(on) :RDS(on)=7.0Ω(Max.)
FIR2N60FG
PIN Connection TO-220F
G
DS
D
G
S
Marking Diagram
YAWW
FIR2N60F
Y = Year
A = Assembly Location
WW = Work Week
FIR2N60F = Specific Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted) Advanced N-Ch Power MOSFET
Characteristic Symbol
Rating
Unit
Drain-source voltage
VDSS 600
V
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25)
ID (Tc=100)
±20
1.5
1
V
A
A
Drain current (Pulsed) *
IDM 6.0
A
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
PD19.1
IAS 2.0
EAS 88
IAR 2.0
EAR 8
W
A
mJ
A
mJ
Junction temperature
Storage temperature range
TJ
150
°C
Tstg -55~150
* Limited by maximum junction temperature
Characteristic Symbol
Thermal
resistance
Junction-case R
Junction-ambient R
th(J-C) -
th(J-A) -
Typ.
Max.
5.6
100
Unit
°C/W
@ 2010 Copyright By American First Semiconductor
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Page 1/7




 FIR2N60FG
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
BVDSS
VGS(th)
ID=250uA, VGS=0 600
ID=250uA, VDS=VGS
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
IDSS
IGSS
RDS(ON)
gfs
VDS=600V, VGS=0V -
VDS=0V, VGS=±30V
VGS=10V, ID=1.0A -
VDS=10V, ID=1.0A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss -
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
Turn-on d elay t ime
Rise time
Turn-off delay time
Fall time
td(on)
tr -
td(off)
tf
VDD=300V, ID=1.5A
RG=4.7
Total gate charge
Gate-source charge
Gate-drain charge
Qg -
Qgs -
Qgd
-
VDS=480V, VGS=10V
ID=1.5A
FIR2N60FG
Min. Typ. Max.
--
2.0 3.0 4.0
- 25
- - ±100
7.0 8.0
-5-
170 -
- 27 -
-5 -
-8-
30 -
- 22 -
- 55
-
7.5
1.7 -
- 4. 0
-
Unit
V
uA
nA
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
IS Integral reverse diode
ISM in the MOSFET
--
--
1.5
6.0
Forward voltage
VSD VGS=0V, IS=1.5A -
- 1.5
Reverse recovery time
Reverse recovery charge
trr IS=1.5A, VGS=0V
Qrr dIF/dt=100A/us
- 250 -
- 550 -
Unit
A
V
ns
nC
Note ;
Repetitive rating : Pulse width limited by maximum junction temperature
L=10.0mH, IAS=1.5A, VD. D=50V, RG=25, Starting TJ=25
Pulse Test : Pulse width300us, Duty cycle2%
Essentially independent of operating temperature
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Page 2/7




 FIR2N60FG
Electrical Characteristic Curves
Fi g. 1 ID - VDS
FIR2N60FG
Fi g. 2 ID - VGS
-
Fi g. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fi g. 6 VGS - QG
=
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Page 3/7



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