FIR2N60FG

FIR2N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=3.4F(Typ.) Low gate charge : Qg= 7.0nC(Typ.) Low RDS(on) :RDS(on)=7.0Ω(Max.) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = Specific Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Advanced N-Ch Power MOSFET Rating VDSS 600 VGSS ID (Tc=25℃) (Tc=100℃) IDM 6.0 PD19.1 IAS 2.0 EAS 88 IAR 2.0 EAR 8 TJ Tstg 150 -55~150 ±20 1.5 1 Unit V V A A A W A mJ A mJ °C Characteristic Symbol Thermal resistance Junction-case R Junction-ambient R th(J-C) th(J-A) Typ. - Max. 5.6 100 Unit °C/W http://www.Datasheet4U.com @ 2010 Copyright By American First Semiconductor Page 1/7 FIR2N60FG Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on d elay t ime Rise t...