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Bidirectional Thyristors. Z0103MA Datasheet

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Bidirectional Thyristors. Z0103MA Datasheet






Z0103MA Thyristors. Datasheet pdf. Equivalent




Z0103MA Thyristors. Datasheet pdf. Equivalent





Part

Z0103MA

Description

Silicon Bidirectional Thyristors



Feature


Z0103MA Sensitive Gate Triacs Series Sil icon Bidirectional Thyristors Designed for use in solid state relays, MPU inte rface, TTL logic and any other light in dustrial or consumer application. Suppl ied in an inexpensive T O−92 package which is readily adaptable for use in a utomatic insertion equipment. Features http://onsemi.com • One−Piece, Inj ection−Molded Package • .
Manufacture

ON Semiconductor

Datasheet
Download Z0103MA Datasheet


ON Semiconductor Z0103MA

Z0103MA; Blocking Voltage to 600 V • Sensitive Gate Triggering in Four Trigger Modes ( Quadrants) for all • • • • • TRIACS 1.0 AMPERE RMS 600 VOLTS MT2 G MT1 possible Combinations of Trigger S ources, and especially for Circuits tha t Source Gate Drives All Diffused and G lassivated Junctions for Maximum Unifor mity of Parameters and Reliability Impr oved Noise Immunity (dv/dt Min.


ON Semiconductor Z0103MA

imum of 10 V/msec at 110°C) Commutating di/dt of 1.6 A/msec at 110°C High Sur ge Current of 8 A These are Pb−Free D evices MAXIMUM RATINGS (TJ = 25°C unl ess otherwise noted) Rating Peak Repeti tive Off-State Voltage (TJ = −40 to + 125°C)(1) Sine Wave 50 to 60 Hz, Gate Open On-State RMS Current Full Cycle Si ne Wave 50 to 60 Hz (TC = 50°C) Peak N on−Repetitive Surge Current.


ON Semiconductor Z0103MA

One Full Cycle, Sine Wave 60 Hz (TC = 1 10°C) Circuit Fusing Considerations (t = 8.3 ms) Average Gate Power (TC = 80 C, t v 8.3 ms) Peak Gate Current (t v 20 ms, TJ = +125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) Value 6 00 Unit V 3 STRAIGHT LEAD BULK PACK 1 2 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 (TO−226AA).

Part

Z0103MA

Description

Silicon Bidirectional Thyristors



Feature


Z0103MA Sensitive Gate Triacs Series Sil icon Bidirectional Thyristors Designed for use in solid state relays, MPU inte rface, TTL logic and any other light in dustrial or consumer application. Suppl ied in an inexpensive T O−92 package which is readily adaptable for use in a utomatic insertion equipment. Features http://onsemi.com • One−Piece, Inj ection−Molded Package • .
Manufacture

ON Semiconductor

Datasheet
Download Z0103MA Datasheet




 Z0103MA
Z0103MA
Sensitive Gate Triacs
Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive T O92 package which is readily adaptable for use in
automatic insertion equipment.
Features
OnePiece, InjectionMolded Package
Blocking Voltage to 600 V
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C)
Commutating di/dt of 1.6 A/msec at 110°C
High Surge Current of 8 A
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off-State Voltage
(TJ = 40 to +125°C)(1)
Sine Wave 50 to 60 Hz, Gate Open
VDRM,
VRRM
600
V
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = 50°C)
Peak NonRepetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
1.0
A
ITSM
8.0
A
I2t
0.35
A2s
Average Gate Power (TC = 80°C, t v 8.3 ms)
Peak Gate Current (t v 20 ms, TJ = +125°C)
Operating Junction Temperature Range
PG(AV)
IGM
TJ
1.0
1.0
40 to
+125
W
A
°C
Storage Temperature Range
Tstg 40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
1.0 AMPERE RMS
600 VOLTS
MT2
MT1
G
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
TO92 (TO226AA)
CASE 029
STYLE 12
MARKING DIAGRAM
Z0
10xMA
YWW G
G
1 23
x = 3,7,9
Y = Year
WW = Work Week
G = PbFree Package
(*Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
© Semiconductor Components Industries, LLC, 2012
January, 2012Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1 Publication Order Number:
Z0103MA/D
http://www.Datasheet4U.com




 Z0103MA
Z0103MA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
RqJC
RqJA
TL
Max
50
160
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = +125°C
IDRM, IRRM
Peak OnState Voltage
(ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
VTM − −
IGT
0.15
0.15
0.15
0.25
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
IL
−−
−−
−−
−−
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 W)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
VGT
−−
−−
−−
−−
Gate NonTrigger Voltage
(VD = 12 V, RL = 30 W, TJ = 125°C)
All Four Quadrants
VGD 0.2
Holding Current
(VD = 12 Vdc, Initiating Current = 50 mA, Gate Open)
DYNAMIC CHARACTERISTICS
IH − −
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM,
Exponential Waveform, Gate Open, TJ = 110°C)
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt(c)
1.6
dv/dt
di/dt
10 30
−−
Max Unit
5.0 mA
500
1.56 V
mA
3.0
3.0
3.0
5.0
mA
7.0
15
7.0
7.0
V
1.3
1.3
1.3
1.3
1.3 V
7.0 mA
A/ms
V/ms
20 A/ms
http://onsemi.com
2




 Z0103MA
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Z0103MA
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2
VTM
VTM
IH
off state
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
IGT
() IGT
GATE
MT1
REF
() MT2
(+) IGT
GATE
MT1
REF
() MT2
Quadrant I
+ IGT
Quadrant III
() IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3



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