AOT11C60

AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary V DS @ T j,max IDM 700 80A RDS(ON),max Qg,typ Eoss @ 400V < 0.4Ω 30nC 5.1µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11C60L & AOB11C60L & AOTF11C60L Top View TO-220 TO-220F TO-263 D PAK D 2 D D G AOT11C60 S AOTF11C60 G D S AOB11C60 S G G S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter AOT11C60/AOB11C60 Symbol 600 Drain-Source Voltage VDS AOTF11C60 Units V V Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD 278 2.2 11 9 ±30 11* 9* 80 11 60 750 100 20 50 0.4 -55 to 150 300 AOT11C60/AOB11C60 65 0.5 0.45 AOTF11C60 65 -2.5 A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds T...