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N-Channel MOSFET. AOTF11C60 Datasheet

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N-Channel MOSFET. AOTF11C60 Datasheet






AOTF11C60 MOSFET. Datasheet pdf. Equivalent




AOTF11C60 MOSFET. Datasheet pdf. Equivalent





Part

AOTF11C60

Description

11A N-Channel MOSFET



Feature


AOT11C60/AOB11C60/AOTF11C60 600V,11A N-C hannel MOSFET General Description The AOT11C60 & AOB11C60 & AOTF11C60 are fab ricated using an advanced high voltage MOSFET process that is designed to deli ver high levels of performance and robu stness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a long with guaranteed avalanche capabili ty these parts can.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AOTF11C60 Datasheet


Alpha & Omega Semiconductors AOTF11C60

AOTF11C60; be adopted quickly into new and existin g offline power supply designs. Produc t Summary V DS @ T j,max IDM 700 80A R DS(ON),max Qg,typ Eoss @ 400V < 0.4Ω 30nC 5.1µJ 100% UIS Tested 100% Rg T ested For Halogen Free add "L" suffix t o part number: AOT11C60L & AOB11C60L & AOTF11C60L Top View TO-220 TO-220F TO- 263 D PAK D 2 D D G AOT11C60 S AOTF1 1C60 G D S AOB11C60 .


Alpha & Omega Semiconductors AOTF11C60

S G G S C unless otherwise noted Abso lute Maximum Ratings TA=25° Parameter AOT11C60/AOB11C60 Symbol 600 Drain-Sour ce Voltage VDS AOTF11C60 Units V V G ate-Source Voltage Continuous Drain Cur rent Pulsed Drain Current C Avalanche C urrent C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MO SFET dv/dt ruggedness Peak diode recove ry dv/dt TC=25° C P.


Alpha & Omega Semiconductors AOTF11C60

ower Dissipation B Derate above 25oC TC= 25° C TC=100° C VGS ID IDM IAR EAR E AS dv/dt PD 278 2.2 11 9 ±30 11* 9* 8 0 11 60 750 100 20 50 0.4 -55 to 150 30 0 AOT11C60/AOB11C60 65 0.5 0.45 AOTF11C 60 65 -2.5 A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W TJ, T STG Junction and Storage Temperature Ra nge Maximum lead temperature for solder ing TL purpose, 1/8" from .

Part

AOTF11C60

Description

11A N-Channel MOSFET



Feature


AOT11C60/AOB11C60/AOTF11C60 600V,11A N-C hannel MOSFET General Description The AOT11C60 & AOB11C60 & AOTF11C60 are fab ricated using an advanced high voltage MOSFET process that is designed to deli ver high levels of performance and robu stness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a long with guaranteed avalanche capabili ty these parts can.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AOTF11C60 Datasheet




 AOTF11C60
AOT11C60/AOB11C60/AOTF11C60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11C60 & AOB11C60 & AOTF11C60 are
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11C60L & AOB11C60L & AOTF11C60L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
TO-263
D2PAK
D
700
80A
< 0.4
30nC
5.1µJ
D
AOT11C60
S
D
G
AOTF11C60
S
GD
G
AOB11C60
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT11C60/AOB11C60
AOTF11C60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C,J
Repetitive avalanche energy C,J
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
11 11*
9 9*
80
11
60
750
100
20
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
50
0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT11C60/AOB11C60
65
0.5
0.45
AOTF11C60
65
--
2.5
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.2.0 July 2013
www.aosmd.com
Page 1 of 6
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 AOTF11C60
AOT11C60/AOB11C60/AOTF11C60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/TJ
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=40V, ID=5.5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=11A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=11A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
600
700
V
0.55
V/ oC
1
µA
10
±100 nΑ
345V
0.36 0.4
12 S
0.7 1
V
11 A
80 A
2000
84
60
pF
pF
pF
107 pF
2.8 pF
3.5
30 42 nC
14 nC
7 nC
50 ns
50 ns
70 ns
32 ns
485 ns
7.2 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=5A, VDD=150V, RG=25, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 July 2013
www.aosmd.com
Page 2 of 6




 AOTF11C60
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
8V
24 10V
100
VDS=40V
-55°C
7V 10
18
6.5V
125°C
12
1
6V
6
25°C
VGS=5.5V
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
0.1
2
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
1.0 3
0.8
0.6
VGS=10V
0.4
0.2
0.0
0
5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2.5
2 VGS=10V
ID=5.5A
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2 1E+02
1E+01
1.1
1E+0040
125°C
1 1E-01
25°C
1E-02
0.9
1E-03
0.8
-100 -50 0 50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
1E-04
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2.0 July 2013
www.aosmd.com
Page 3 of 6



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