SEMICONDUCTOR
MJE13005A(NPN)
RoHS RoHS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors (4A ...
SEMICONDUCTOR
MJE13005A(
NPN)
RoHS RoHS
Nell High Power Products
Switchmode Series
NPN Silicon Power
Transistors (4A / 400V / 75W) FEATURES
VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 µs (Max.) @ lC = 2 A 700V blocking capability
1
2
3
TO-220AB (MJE13005A)
DESCRIPTION
T hese devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as switching
regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1) B (2) E
(
NPN)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL VCEV V CEO V EBO
IC I CM
IB I BM
PARAMETER Collector to base voltage (V BE = 0) Collector to emitter voltage (I B = 0) Emitter to base voltage
C ollector current - continuous
VALUE 700 400 9
4
UNIT
V
Peak collector current (Note 1)
B ase current - continuous
8
2
A
Peak base current (Note 1) 4
IE I EM PD
Emitter current - continuous
Peak emitter current (Note 1)
6 12 T C = 25 °C 75 0.6 150 ºC -65 to 150
26 5
Total power dissipation Derate above 25ºC Tj T stg
TL
W W/ºC
Junction temperature Storage temperature
Maximum lead temperature for soldering purposes: 1/16” from case for ≤ 10 seconds
ºC
Note: 1. Pulse test : Pulse width = 5ms, duty cycle ≤ 10%
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