TK80E08K3

Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) V Gate−source voltage DC (Note Drain current 1) ymbol VDSS 75 DGR 75 Rating Unit V V V A A A W mJ A mJ VGSS ±20 ID 80 ID 70 IDP 240 PD 200 2) EAS 107 IAR 40 EAR 20 dv/dt Tch 175 Tstg −55~175 12 DC (Note 1,4) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4) JEDEC JEITA TOSHIBA TO-220AB SC-46 V/ns °C °C Weight: 1.9 g (typ.) 2 change in Note : Using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the signif icant temperature, etc.) may cause this product to decrease in the relia bility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t he appropriate reliabil ity upon re viewing the Tos hiba Semiconductor Reliability Handbook (“Han dling 1 Precautions”/“Derating Co...