TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS )
Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)
High forward transfer admittance : |Yfs| = 135 S (typ.)
Low leakage current
: IDSS = 10 µA (max) (VDS = 75 V)
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain−gate voltage (RGS = 20 kΩ) V
DC (Note 1)
DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Repetitive avalanche energy (Note 3)
Peak diode recovery dv/dt (Note 5)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Weight: 1.9 g (typ.)
Note :Using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the signif ica2nt change in
temperature, etc.) may cause this product to decrease in the relia bility significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design t he appropriate reliabil ity upon re viewing the Tos hiba Semiconductor R1eliability Handbook (“Han dling
Precautions”/“Derating Concept and Met hods”) and individual r eliability data (i. e. reliability test report and estimate d
failure rate, etc).Thermal Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 40A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Tc=100
Note 5: IDR 80A,di/dt 160A/µs, Tch Tch m ax.
This transistor is an electrostatic-sensitive device.
Please handle with caution.