2SD2636

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse I ymbol VCBO VCEO VEBO IC CP 15 Rating 160 160 5 8 Unit V V V A 1.Base A W °C °C 2.Collector(heatsink) 3.Emitter IB PC Tj Tstg 1 100 150 −55 to 150 JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C 1A temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 30 Ω Emitter 1 2006-11-21 http://www.Datasheet4U.com 2SD2636 Electrical Characteristics (Tc = 25°C) Characteristic Collector cut-off current Emitter cut-off current Col...