TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
Power Amplifier Applications
High-Power Switching Applications
• High-breakdown voltage: VCEO = 160 V (min)
• Complementary to 2SB1682
Absolute Maximum Ratings (Tc = 25°C)
VCBO 160 V
VCEO 160 V
VEBO 5 V
Collector power dissipation
Storage temperature range
Tj 150 °C
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
≈ 30 Ω