Document
2SK2876-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
500V
1,5Ω
±6A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 500 ±6 ±24 ±35 6 196.9 30 150 -55 ~ +150
L=10.0mH,Vcc=50V
> Equivalent Circuit
Unit V A A V A mJ W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω Tch=25°C L = 10,0mH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs T ch=25°C
Min. 500 3,5
Typ. 4,0 10 0,2 10 1,25 4 540 100 45 13 40 30 25 1,0 450 3,2
Max. 4,5 500 1,0 100 1,5 810 150 70 20 60 45 40 1,5
2
6
Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC
Symbol R th(ch-c) R th(ch-a)
Test conditions channel to case channel to air
Min.
Typ.
Max. 4,17 62,5
Unit °C/W °C/W
http://www.Datasheet4U.com
N-channel MOS-FET
500V
1,5Ω
2SK2876-01MR
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(T ch): ID=3A; VGS=10V
±6A
30W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; T C=25°C
Typical Transfer Characteristics
ID=f(V GS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
1
RDS(ON) [Ω ]
↑ 2
ID [A]
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test;T C=25°C
Typical Forward Transconductance vs. ID
gfs=f(I D); 80µs pulse test; VDS=25V; Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(T ch); ID=1mA; V DS=VGS
↑
RDS(ON) [Ω ]
↑
gfs [S]
↑ 5
VGS(th) [V]
4
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg): ID=6A; Tc=25°C
Forward Characteristics of Reverse Diode
IF=f(V SD); 80µs pulse test; VGS=0V
↑
C [F]
↑
VDS [V]
↑
VGS [V]
.