MBRF20100CT

MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal −to −silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low −voltage, high −frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features http://onsemi.com Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated. No Isolation Hardware Required. These are Pb−Free Devices SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS 1 2 3 Mechanical Characteristics: ISOLATED TO−220 CASE 221D STYLE 3 1 2 Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Leads are Readily Solderable 3 ORDERING AND MARKING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 9 1 Publication Order Number: MBRF20100CT/D http://www.Datasheet4U.com MBRF20100...